Scanning electron microscopy (SEM) has frequently been used to study semiconductor materials. It offers the possibility of obtaining reliable qualitative and quantitative information on relevant local material parameters. The temperature rise due to electron-beam bombardment can influence some semiconductor parameters, which then will influence the SEM information. In this work we propose a model calculation based on the Monte Carlo (MC) method to calculate the temperature rise due to electron-beam heating. The results show that the temperature rise increases with increasing numbers of electrons (electron-beam current), and the inverse behavior is observed with respect to the electron energy (electron-beam voltage). The decrease in temperature rise with depth is also obtained.
The cathodoluminescence (CL) technique is frequently used to study semiconductor materials. The quantitative determination of material parameters requires an accurate simulation of the CL signal as a function of electron beam parameters (i.e. intensity I p , energy E 0 ). The free surface of a semiconductor can be described by a defect density N t , which induces localised electron states E t in the band gap. The surface is generally charged, which induces a band bending near the surface. Hence, a potential barrier E b is formed across a space-charge region. The electric field E in this region causes the carriers to drift towards the surface and enhances their recombination. This latter is treated using the Shockley-Read-Hall theory. This paper deals with the case of n-GaAs, particularly the comparison between the numerical results of the model and experimental data obtained from the literature. A connection between the movement of the energy levels E t considered in this model and the surface recombination velocity V s is established.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.