Monte Carlo model of the temperature rise at a GaAs surface under an electron beam

Nouiri, A.; Chaguetmi, S.; Belabed, N.

doi:10.1002/sia.2372

Cited by 23 publications

(23 citation statements)

References 12 publications

(7 reference statements)

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“…Electron beam-induced heating. Inelastic collisions during electron-sample interactions convert a significant portion of the electron-beam energy into heat within the sample, through excitation of lattice oscillations (Nouiri et al 2006). The amount of heat generated within the interaction volume increases with higher beam power (current × accelerating voltage), and with decreas-ing spot size and thermal conductivity.…”

Section: Physical Effects Of the Electron Beammentioning

confidence: 99%

New constraints on electron-beam induced halogen migration in apatite

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Humphreys

Smith

et al. 2014

American Mineralogist

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Fluorine and chlorine X-ray count rates are known to vary significantly during electron probe microanalysis (EPMA) of apatite. Since the rate, timing, and magnitude of this variation are a function of apatite orientation and composition, as well as EPMA operating conditions, this represents a significant problem for volatile element analysis in apatite. Although the effect is thought to be an intrinsic crystallographic response to electron-beam exposure, the mechanisms and causes of the count rate variability remain unclear. We tackle this by examining directly the effects of electron-beam exposure on apatite, by performing secondary ion mass spectrometry (SIMS) depth profiles of points previously subject to electron-beam irradiation. During irradiation of fluorapatite, oriented with the c-axis parallel to the electron beam, halogens become progressively concentrated at the sample surface, even under a relatively low power (15 nA, 10-15 kV) beam. This surface enrichment corresponds to an observed increase in EPMA FKa X-ray count rates. After prolonged irradiation, the surface region starts to lose halogens and becomes progressively depleted, corresponding with a drop in EPMA count rates. Under normal EPMA operating conditions there is no halogen redistribution in fluorapatite oriented with the c-axis perpendicular to the electron beam, or in chlorapatite. We infer that anionic enrichment results from the migration of halogens away from a center of charge build-up caused by the implantation of electrons from the EPMA beam, assisted by the thermal gradient induced by electron-matter interactions. The process of surface enrichment is best explained by halogen migration through interstitial crystallographic sites in the c-axis channel. This suggests that once the thermal and electric fields are removed, halogens may relax back to their original positions on very long timescales or with sample heating.

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Section: Physical Effects Of the Electron Beammentioning

confidence: 99%

New constraints on electron-beam induced halogen migration in apatite

Stock

Humphreys

Smith

et al. 2014

American Mineralogist

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“…Taking into account the dissipation of heat outside, caused by thermal conduction, the heat flux from zone i-1 to zone i is written [10] as:…”

Section: Calculation Proceduresmentioning

confidence: 99%

“…4 shows the local temperature rise as a function of depth for different values 54 L. LEGHRIB, A. NOUIRI of accelerating energy E 0 in Al 0.5 Ga 0.5 N. The local temperature rise increases with decreasing of E 0 , because the generation volume depends on E 0 . In case of small values of E 0 , the total of phonons generated by the electron beam is located in a small volume, so the temperature rise becomes important [10]. Consequently, the researchers should take into account this increasing of temperature in nanocharacterization by electron beam techniques, because in this case we use small values of E 0 .…”

Section: Penetration Depthmentioning

confidence: 99%

“…In the recent work by Randolph et al [9], in order to determine the magnitude of electron-beaminduced heating (EBIH) on a nanofiber tip and a SiO 2 thin film as a function of current beam energy and sample geometry, they employed a Monte Carlo electron-solid interaction model integrated with a finite element. However, at nanoscale Nouiri et al [10] demonstrated that a small change in the primary beam current can greatly increase the degree of surface heating, particularly at lower accelerating voltages.…”

Section: Introductionmentioning

confidence: 99%

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Local temperature rise during the electron beam characterization Calculation model for the Al_xGa_1-xN at low dimensions

Leghrib

Nouiri

2018

Materials Science-Poland

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During the characterization by electron beam techniques including scanning electron microscope (SEM) and cathodoluminescence at low dimensions, some undesirable phenomena (unwanted effects) can be created, like the thermal effects (or electron beam damage), and these effects can damage the sample. This limits the information one can get from a sample or reduces image spatial resolution. In order to understand these effects, significant efforts have been made but these studies focused on the thermal properties, without a detailed study of the causes of nanoscale heating in the bulk of samples during the SEM-characterization. Additionally, it is very difficult to measure experimentally the heating because there are many variables that can affect the results, such as the current beam, accelerating energy, thermal conductivity and size of samples. Taking into account all the factors and in order to determine the local temperature rise during the electron beam characterization of AlGaN at low dimensions, we have used a hybrid model based on combined molecular dynamics and Monte Carlo calculation of inelastic interaction of electrons with matter to calculate the temperature elevation during the SEM-characterization which can be taken into account during the characterization of AlGaN at low dimension by electron beam techniques.

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“…Inelastic scattering occurs by several mechanisms inside the material. 12 In this model, we study a semiconductor material (GaAs), and so there are three principal processes:…”

Section: Theorymentioning

confidence: 99%

Variation of GaAs surface charge under an electron beam: effect on cathodoluminescence signal

Nouiri

Elateche

Aouati

et al. 2007

Surface & Interface Analysis

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This work is a self-consistent calculation model of the GaAs surface charge under electronic bombardment. The surface charge due to surface defects can be influenced by the electron-hole pair generated at the surface zone (in the depletion region). Numerical results show that the donor states charge decreases under the cathodic excitation, but when the surface states are of acceptor type, the surface charge increases with increasing excitation levels (increasing of beam current). In the case of donor states, the cathodoluminescence (CL) intensity increases when the energy level E t , associated with the surface density N t , is near the conduction band E c . In the case of acceptor states, the same behavior of CL intensity has been observed when E t is near the valance band E v . In all cases, the CL intensity decreases when E t moves to the middle of the band gap. According to this calculation, it is clear that the variation of surface charge must be taken into account in all surface analysis techniques based on electron beams.

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Monte Carlo model of the temperature rise at a GaAs surface under an electron beam

Cited by 23 publications

References 12 publications

New constraints on electron-beam induced halogen migration in apatite

New constraints on electron-beam induced halogen migration in apatite

Local temperature rise during the electron beam characterization Calculation model for the Al_xGa_1-xN at low dimensions

Variation of GaAs surface charge under an electron beam: effect on cathodoluminescence signal

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Monte Carlo model of the temperature rise at a GaAs surface under an electron beam

Cited by 23 publications

References 12 publications

New constraints on electron-beam induced halogen migration in apatite

New constraints on electron-beam induced halogen migration in apatite

Local temperature rise during the electron beam characterization Calculation model for the AlxGa1-xN at low dimensions

Variation of GaAs surface charge under an electron beam: effect on cathodoluminescence signal

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Product

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Local temperature rise during the electron beam characterization Calculation model for the Al_xGa_1-xN at low dimensions