Wafers of undoped GaAs have been submitted to thermal treatments in various conditions of temperature, duration, environment and cooling rate. The electronic activity of dislocations is examined by cathodoluminescence in a scanning electron microscope. The results are that short treatments at 1050 "C give a fairly homogeneous luminescence all over the wafers, while defect contrasts are enhanced after 850 "C anneals.
2014 La distribution du défaut EL2 dans des plaquettes de GaAs semi-isolant a été mesurée par des techniques électriques et optiques. Nous avons également suivi l'influence des conditions de croissance telles que la stoechiométrie, la fraction solidifiée et l'humidité de l'encapsulant sur la distribution de EL2 et des impuretés résiduelles. Abstract. 2014 A combination of electrical and optical mapping experiments has been used to obtain the EL2 distribution patterns in semi-insulating GaAs wafers. The influence of growing conditions such as stoichiometry, mass fraction solidified and moisture in the encapsulant is shown in terms of EL2 uniformity and residual doping level.
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