Influence of the doping element on the electron mobility in n-silicon

Abstract

We present a theoretical approach to study the dependence of the electron mobility on the dopant species in n-doped silicon under low electric fields. The electron charge distribution of the impurities is calculated by the Thomas-Fermi theory using the energy functional formulation. Ionized impurity scattering has been treated within the Born approximation. Our model accounts for degenerate statistics, dispersive screening and pair scattering, which become important in heavily doped semiconductors. The dielectric function is accurately approximated by a rational function. A new expression for the second Born amplitude of a Yukawa-like charge distribution is derived, which now depends on the atomic and electron numbers of the impurity ion. Monte Carlo simulations including all important scattering mechanism have been performed in the doping concentration range from 10 15 to 10 21 cm Ϫ3. The agreement with experimental data is excellent. The results confirm the lower electron mobility in As-doped silicon in comparison to P-doped silicon.

Ultrafast carrier dynamics in Ge by ultra-broadband mid-infrared probe spectroscopy

“…Both ω p and Γ significantly decrease with increasing the delay time and then remain constant for the longer delay time. On the contrary, the carrier mobility μ (= eτ / m *, where is the electron charge, m* is the carrier effective mass, τ is the average scattering time, which is equal to 1/ Γ ) rises with increasing the delay time due to the reduction of carrier concentration171819. After 200 ps, the carrier mobility μ maintains to be ~350 cm 2  V −1  s −1 .…”

Carrier mobility and strain effect in heavily doped p-type Si

“…In particular, the electron mobility is lower for As than P doped Si [2] and the hole mobility is lower for Ga than B doped Si [3,4]. Several authors attempted to explain the different mobility in P and As doped Si introducing impurity-core effect in the calculations [5][6][7][8] but the modification is too weak to account for the experimental results [9]. The hole mobility is a more complicated task, the effect of chemical species has not even been modelled and a limited amount of experimental data is available [3,4].…”

The Seebeck coefficient and phonon drag in silicon

“…Many theories and experiments have been reported on the mobility of electrons in Si and Ge. 3,12,[23][24][25][26][27][28][29][30] We use the Rode method 3,28 for the electron lifetime. The approach in TABLE I.…”