volume 135, issue 3, P220-223 2006
DOI: 10.1016/j.mseb.2006.08.009
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Abstract: Although carrier mobility (μ) in Si is a fundamental property deeply investigated since 40 years, a complete understanding of its characteristics over a large range of carrier concentration is still lacking. For example, the effect of strain was largely debated and μ enhancement was demonstrated in strained Si channels where the carrier concentration is <10^17 cm−3. On the other hand, in heavily doped Si (>10^20 cm−3), which is actually of fundamental interest for USJ applications, many questions are still ope…

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