No abstract

Ma n~-p. rtlcl1 physic. I Gerald O. "'hln, --2nd td . p. ct. Includt . blb ll ogr.ph l cal rlflrtnCts. lSBN•lJ: 9711-1.

Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid-solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime-experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3 method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

We use molecular dynamics simulations and the lattice-based scattering boundary method to compute the thermal conductance of finite-length Lennard-Jones superlattice junctions confined by bulk crystalline leads. The superlattice junction thermal conductance depends on the properties of the leads. For junctions with a superlattice period of four atomic monolayers at temperatures between 5 and 20 K, those with mass-mismatched leads have a greater thermal conductance than those with mass-matched leads. We attribute this lead effect to interference between and the ballistic transport of emergent junction vibrational modes. The lead effect diminishes when the temperature is increased, when the superlattice period is increased, and when interfacial disorder is introduced, but is reversed in the harmonic limit. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Thermoelectrics is an old field. In 1823, Thomas Seebeck discovered that a voltage drop appears across a sample that has a temperature gradient. This phenomenon provided the basis for thermocouples used for measuring temperature and for thermoelectric power generators. In 1838, Heinrich Lenz placed a drop of water on the junction of metal wires made of bismuth and antimony. Passing an electric current through the junction in one direction caused the water to freeze, and reversing the current caused the ice to quickly melt; thus thermoelectric refrigeration was demonstrated (figure 1).

The phonon thermal conductivity of a multilayer is calculated for transport perpendicular to the layers. There is a crossover between particle transport for thick layers to wave transport for thin layers. The calculations show that the conductivity has a minimum value for a layer thickness somewhat smaller then the mean free path of the phonons.

No abstract

The optical conductivity is evaluated for interband transitions between a Qat valence band and a parabolic conduction band. The conduction band is filled with electrons to a Fermi energy pg. The conductivity is calculated assuming that the electron-hole interaction is attractive, static, and short range. The final-state interactions between the electron and hole cause a divergence in the conductivity at the interband threshold. This divergence appears to go as a power law. For this case of an infinite hole mass, the exciton binding energy vanishes, since the singularity in the scattering amplitude occurs just at threshold.