The reported thermal conductivity (kappa) of suspended graphene, 3000 to 5000 watts per meter per kelvin, exceeds that of diamond and graphite. Thus, graphene can be useful in solving heat dissipation problems such as those in nanoelectronics. However, contact with a substrate could affect the thermal transport properties of graphene. Here, we show experimentally that kappa of monolayer graphene exfoliated on a silicon dioxide support is still as high as about 600 watts per meter per kelvin near room temperature, exceeding those of metals such as copper. It is lower than that of suspended graphene because of phonons leaking across the graphene-support interface and strong interface-scattering of flexural modes, which make a large contribution to kappa in suspended graphene according to a theoretical calculation.

We show through an exact numerical solution of the phonon Boltzmann equation that the lattice thermal conductivity of graphene is dominated by contributions from the out-of-plane or flexural phonon modes, previously thought to be negligible. We connect this unexpected result to the anomalously large density of states of flexural phonons compared to their in-plane counterparts and to a symmetry-based selection rule that significantly restricts anharmonic phonon-phonon scattering of the flexural modes. The result is found to hold in the presence of the ripples known to occur in graphene, phonon-isotopic impurity scattering, and rigidity of the flexural phonon branch arising from the long-wavelength coupling between flexural and in-plane modes. Finally, accurate inclusion of the momentum conserving Normal phonon-phonon scattering processes within the context of a full solution of the phonon Boltzmann equation are shown to be essential in accurately describing the graphene thermal conductivity, in contrast to the more commonly used relaxation time and long wavelength approximations.

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the leadcontaining chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the firstprinciples simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.

We present an ab initio theoretical approach to accurately describe phonon thermal transport in semiconductors and insulators free of adjustable parameters. This technique combines a Boltzmann formalism with density functional calculations of harmonic and anharmonic interatomic force constants. Without any fitting parameters, we obtain excellent agreement ͑Ͻ5% difference at room temperature͒ between the calculated and measured intrinsic lattice thermal conductivities of silicon and germanium. As such, this method may provide predictive theoretical guidance to experimental thermal transport studies of bulk and nanomaterials as well as facilitating the design of new materials.

We have calculated the thermal conductivities (κ) of cubic III-V boron compounds using a predictive first principles approach. Boron arsenide is found to have a remarkable room temperature κ over 2000 W m(-1) K(-1); this is comparable to those in diamond and graphite, which are the highest bulk values known. We trace this behavior in boron arsenide to an interplay of certain basic vibrational properties that lie outside of the conventional guidelines in searching for high κ materials, and to relatively weak phonon-isotope scattering. We also find that cubic boron nitride and boron antimonide will have high κ with isotopic purification. This work provides new insight into the nature of thermal transport at a quantitative level and predicts a new ultrahigh κ material of potential interest for passive cooling applications.

We have examined the commonly used Tersoff and Brenner empirical interatomic potentials in the context of the phonon dispersions in graphene. We have found a parameter set for each empirical potential that provides improved fits to some structural data and to the in-plane phonon dispersion data for graphite. These optimized parameter sets yield values of the acoustic phonon velocities that are in better agreement with measured data. They also provide lattice thermal conductivity values in single-walled carbon nanotubes that are considerably improved compared to those obtained from the original parameter sets.

We present a first-principles theoretical approach to calculate the lattice thermal conductivity of diamond based on an exact solution of the Boltzmann transport equation. Density-functional perturbation theory is employed to generate the harmonic and third-order anharmonic interatomic force constants that are required as input. A central feature of this approach is that it provides accurate representations of the interatomic forces and at the same time introduced no adjustable parameters. The calculated lattice thermal conductivities for isotopically enriched and naturally occurring diamond are both in very good agreement with experimental data. The role of the scattering of heat-carrying acoustic phonons by optic branch phonons is also investigated. We show that inclusion of this scattering channel is indispensable in properly describing the thermal conductivity of semiconductors and insulators. The accurate adjustable-parameter-free results obtained herein highlight the promise of this approach in providing predictive descriptions of the lattice thermal conductivity of materials.

Recent studies of thermal transport in nanomaterials have demonstrated the breakdown of Fourier's law through observations of ballistic transport. Despite its unique features, another instance of the breakdown of Fourier's law, hydrodynamic phonon transport, has drawn less attention because it has been observed only at extremely low temperatures and narrow temperature ranges in bulk materials. Here, we predict on the basis of first-principles calculations that the hydrodynamic phonon transport can occur in suspended graphene at significantly higher temperatures and wider temperature ranges than in bulk materials. The hydrodynamic transport is demonstrated through drift motion of phonons, phonon Poiseuille flow and second sound. The significant hydrodynamic phonon transport in graphene is associated with graphene's two-dimensional features. This work opens a new avenue for understanding and manipulating heat flow in two-dimensional materials.