Cavity quantum electrodynamics, a central research field in optics and solid-state physics, addresses properties of atom-like emitters in cavities and can be divided into a weak and a strong coupling regime. For weak coupling, the spontaneous emission can be enhanced or reduced compared with its vacuum level by tuning discrete cavity modes in and out of resonance with the emitter. However, the most striking change of emission properties occurs when the conditions for strong coupling are fulfilled. In this case there is a change from the usual irreversible spontaneous emission to a reversible exchange of energy between the emitter and the cavity mode. This coherent coupling may provide a basis for future applications in quantum information processing or schemes for coherent control. Until now, strong coupling of individual two-level systems has been observed only for atoms in large cavities. Here we report the observation of strong coupling of a single two-level solid-state system with a photon, as realized by a single quantum dot in a semiconductor microcavity. The strong coupling is manifest in photoluminescence data that display anti-crossings between the quantum dot exciton and cavity-mode dispersion relations, characterized by a vacuum Rabi splitting of about 140 microeV.

We have calculated the thermal conductivities (κ) of cubic III-V boron compounds using a predictive first principles approach. Boron arsenide is found to have a remarkable room temperature κ over 2000 W m(-1) K(-1); this is comparable to those in diamond and graphite, which are the highest bulk values known. We trace this behavior in boron arsenide to an interplay of certain basic vibrational properties that lie outside of the conventional guidelines in searching for high κ materials, and to relatively weak phonon-isotope scattering. We also find that cubic boron nitride and boron antimonide will have high κ with isotopic purification. This work provides new insight into the nature of thermal transport at a quantitative level and predicts a new ultrahigh κ material of potential interest for passive cooling applications.

The temperature-dependent linewidths of excitons in semiconductors due to the interaction of the exciton with both LO phonons and with acoustic phonons are studied with use of a Green sfunction approach in which the exciton-phonon interaction is treated perturbatively.The interaction between the excitons and the LO phonons is taken to be of the Frohlich form, and the contribution to the linewidth is obtained in closed form. In this case it is found that scattering of the exciton to both bound and continuum states is important and that it is important to treat the continuum states fully as Coulomb scattering states. In describing optical-absorption processes, the fact that absorption occurs from polariton states, which are states composed of excitons coupled to light, is taken into account. The linewidths due to the exciton-LO-phonon interaction are evaluated for a series of II-VI and III-V compound semiconductors, and are shown to account for the existing experimental results for temperatures~80 K. The contributions to the linewidth due to the interaction of excitons with acoustic phonons via both the deformation potential and the piezoelectric couplings are treated, and it is found that the deformation-potential coupling dominates for all of the materials considered. Because of the small velocity of sound, scattering to only intraband intermediate states, i.e. , those in which the internal exciton quantum numbers do not change, is found to contribute to the linewidth. In the case of acoustic phonons, it is found to be important to treat optical absorption as originating from polariton states in order to evaluate properly the magnitude of this contribution to the linewidth. The acoustic-phonon contribution to the linewidths is compared with experiment for temperatures 80 K, for which it dominates the temperature dependence.

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We use a recently developed ab initio approach to calculate the lattice thermal conductivities of compound semiconductors. An exact numerical solution of the phonon Boltzmann transport equation is implemented, which uses harmonic and anharmonic interatomic force constants determined from density functional theory as inputs. We discuss the method for calculating the anharmonic interatomic force constants in some detail, and we describe their role in providing accurate thermal conductivities in a range of systems. This first-principles approach obtains good agreement with experimental results for well-characterized systems (Si, Ge, and GaAs).We determine the intrinsic upper bound to the thermal conductivities of cubic aluminum-V, gallium-V, and indium-V compounds as limited by anharmonic phonon scattering. The effects of phonon-isotope scattering on the thermal conductivities are examined in these materials and compared to available experimental data. We also obtain the lattice thermal conductivities of other technologically important materials, AlN and SiC. For most materials, good agreement with the experimental lattice thermal conductivities for naturally occurring isotopic compositions is found. We show that the overall frequency scale of the acoustic phonons and the size of the gap between acoustic and optic phonons play important roles in determining the lattice thermal 2 conductivity of each system. The first-principles approach used here can provide quantitative predictions of thermal transport in a wide range of systems. 63.20.kg,