Influence of the deposition parameters on the microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon films by HW-CVD

Waman, Vaishali P.; Kamble, Mahesh M.; Pramod, M. R.; Gore, Sagar; Funde, Adinath M.; Hawaldar, Ranjit; Amalnerkar, Dinesh; Sathe, Vasant; Gosavi, Suresh; Jadkar, Sandesh

doi:10.1016/j.jnoncrysol.2011.07.002

Cited by 20 publications

(9 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The FT-IR absorption spectra of Si:H thin films were extensively investigated, and assignment of the absorption bands to a particular Si-H bond configuration was well established [14,17]. The absorption bands at 500-700 cm -1 , 840-900 cm -1 , 1000-1100 cm -1 and 1900-2200 cm -1 are attributed to Si-H wagging/rocking mode, Si-H 2 /(Si-H 2 ) n stretching/bending mode, Si-O stretching mode and Si-H/(Si-H 2 ) n stretching mode, respectively [14,17,24]. In this case, the peak related to the wagging/rocking mode locates at *630 cm -1 , indicating the presence of a crystalline phase in these samples [12,13,24].…”

Section: Methodsmentioning

confidence: 75%

“…In this case, the peak related to the wagging/rocking mode locates at *630 cm -1 , indicating the presence of a crystalline phase in these samples [12,13,24]. The peak related to stretching absorption band locates at *2090 cm -1 , and no absorption peak can be found at *2010 cm -1 , which suggests that the hydrogen is predominately bonded to Si as Si-H 2 and (Si-H 2 ) n complexes [17,24]. The stretching/bending mode (assigned to Si-H 2 /(Si-H 2 ) n complexes) at *840 cm -1 can also be observed for all thin films.…”

Section: Methodsmentioning

confidence: 84%

“…The absorption bands at 500-700 cm -1 , 840-900 cm -1 , 1000-1100 cm -1 and 1900-2200 cm -1 are attributed to Si-H wagging/rocking mode, Si-H 2 /(Si-H 2 ) n stretching/bending mode, Si-O stretching mode and Si-H/(Si-H 2 ) n stretching mode, respectively [14,17,24]. In this case, the peak related to the wagging/rocking mode locates at *630 cm -1 , indicating the presence of a crystalline phase in these samples [12,13,24]. The peak related to stretching absorption band locates at *2090 cm -1 , and no absorption peak can be found at *2010 cm -1 , which suggests that the hydrogen is predominately bonded to Si as Si-H 2 and (Si-H 2 ) n complexes [17,24].…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Wang

Huang

et al. 2015

Rare Met.

View full text Add to dashboard Cite

Hydrogenated microcrystalline silicon (lcSi:H) thin films were deposited by an radio frequency (RF) (13.56 MHz) magnetron sputtering at different substrate temperatures (100-300°C), and the influences of substrate temperature on the growth and properties of lc-Si:H thin films were investigated. Surface roughness and crystallinity of the thin films increase as substrate temperature increases. And all thin films are at the transition region (X c = 49.2 %*61.0 %). The lc-Si:H thin films deposited at lower substrate temperature (B200°C) represent a weak (220) preferred orientation, while the thin films deposited at higher substrate temperature (C250°C) exhibit a weak (111) preferred orientation. The lc-Si:H thin films have a dense structure, and the structural compactness of the thin films slightly increases with substrate temperature increasing. The Fourier transform infrared spectroscopy (FT-IR) results indicate that the lc-Si:H thin films have a low hydrogen content (3.9 at%-5.6 at%), which is in favor of reducing light-induced degradation effect.

show abstract

Section: Methodsmentioning

confidence: 75%

Section: Methodsmentioning

confidence: 84%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Wang

Huang

et al. 2015

Rare Met.

View full text Add to dashboard Cite

show abstract

“…(Wu et al, 2018) revealed in his study that a sustainable approach to the environment was able to foster innovation activities, where the level of company concern for green CSR disclosure influenced by demonstrating improved performance in innovation. (Rexhepi et al, 2013) explained that companies with a stronger disclosure of CSR could lead to innovation through improving product quality features through environmental care activities, which enable company offerings to be unique. Also, (Wei et al, 2015) revealed that the CSR environment signifies the company's efforts to accommodate pressure from business stakeholders, which in turn leads to input of knowledge and triggers innovation.…”

Section: Figure 1 Conceptual Frameworkmentioning

confidence: 99%

Green CSR Moderated by Public Visibility and Innovation Performance at Indonesia Companies

Hidayat

Leon²

2020

View full text Add to dashboard Cite

This study aims to analyze the green CSR of innovation performance with firms approval variables and public visibility can support moderating the relationship of green CSR and innovation. The research sample was 33 manufacturing companies. The results showed that the green CSR has a positive and significant effect on innovation . Also, the company approval variable has been proven to moderate the direction of a positive relationship between green CSR and innovation . The results also prove that public visibility is proven to moderate the direction of the negative relationship between green CSR and performance. This study provide information that shows great concern for the environment; it will increase the company in making changes through innovation activities. Also, the higher the company's approval and public visibility, the company will get support from various stakeholders to run the firms. The level of company concern for CSR activities will be a misjudgment for investors.

show abstract

“…Intrinsic nc-SiC:H films were deposited simultaneously on Corning #7059 glass and c-Si wafers in a indigenously designed, locally fabricated HW-CVD system, details of which have been described elsewhere [24]. Films were prepared by using pure silane (SiH 4 ) as Si source gas, ethane (C 2 H 6 ) as C source gas (Matheson Semiconductor Grade) and hydrogen (H 2 ) as diluent gas.…”

Section: A Film Preparationmentioning

confidence: 99%

Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application

Pawbake

Waman

Waykar

et al. 2015

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)

View full text Add to dashboard Cite

Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films were prepared by hot wire chemical vapor deposition (HW-CVD) method using ethane (C 2 H 6 ) as a carbon precursor. The influence of deposition pressure on structural and optical properties was investigated. The formation of nc-SiC:H films was confirmed by low angle x-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy analysis. An inverse relation between deposition pressure and deposition rate was observed. Optical band gap values, E Tauc and E 04 increases with increase in deposition pressure. In fact, optical band gap values estimated from E 04 method was found higher than the E Tauc values calculated fromTauc's plot. Finally, at optimized deposition pressure (450 mTorr), a photo detector having configuration glass/nc-SiC:H/Al have been fabricated and its photo response was studied. Further study is required to improve the quality of nc-SiC:H films to make use in photo detectors.

show abstract

Influence of the deposition parameters on the microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon films by HW-CVD

Cited by 20 publications

References 31 publications

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Green CSR Moderated by Public Visibility and Innovation Performance at Indonesia Companies

Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application

Contact Info

Product

Resources

About