In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E(1)2g and A1g at ∼356 and ∼420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of ∼12 s and recovery time of ∼13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of ∼51 s and recovery time of ∼88 s were observed with sensitivity ∼137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

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Hybrid lead halide perovskites have emerged as an attractive photoactive semiconductor for optoelectronic applications such as photovoltaics. However, their toxicity and stability issues pose significant challenges to its wide-scale applications and hence the need to find alternative perovskites that are stable and environmentally benign. Recently, double perovskites have been suggested as a potential alternative owing to their non-toxicity and high stability. In the present study, we report the first synthesis of Rb2AgBiI6 thin films in a cubic crystal structure using a facile room-temperature single-step solution process synthesis method and explore their potential optoelectronic applications. The structural, thermal, and mechanical stability, electronic, and optical properties are studied using various experimental techniques, and the results are further corroborated by first-principles density functional theory (DFT) calculations. The Rb2AgBiI6 film has an estimated band gap ∼ of 1.98 eV with the demonstrated thermal stability of ∼ 440 o C, suggesting its potential suitability for low-cost thin-film solar cells. The initial fabricated photovoltaic device without optimization of the synthesis conditions and device architecture show power conversion efficiency (PCE) of 0.1 % and an open-circuit voltage (Voc) of 0.46 V. The successful incorporation of Rb in Bi-based double perovskite should open the way to a new class of Rubidium-based perovskites with significant potential for optoelectronic applications.

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