Synthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties

Jadkar, Vijaya; Pawbake, Amit; Waykar, Ravindra; Jadhavar, Ashok; Mayabadi, Azam; Date, Abhijit; Late, Dattatray J.; Pathan, Habib M.; Gosavi, Suresh; Jadkar, Sandesh

doi:10.1007/s10854-017-7473-6

Cited by 49 publications

(22 citation statements)

References 42 publications

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“…We observe that (i) there are no sharp peaks in the spectra and (ii) the signal can be likely referred to as some background due to the substrate [56], indicating that the material is amorphous. Presence of broad peaks of low intensity at 470 and 830 cm −1 , related to the stretching mode for α-MoO3 crystalline phase [57], can be noted in the as-deposited and in the annealed at 100 °C sample; these peaks decrease at 250 °C while the one at 970 cm −1 starts to increase suggesting that the material maintains the amorphous disordered structure and a longer annealing time with a higher temperature is required to start crystallization [40,52]. Similar behavior was measured for 20-nm and 50-nm thick samples annealed in Air and H2, but they are not reported here for the sake of brevity.…”

Section: Chemical and Structural Characterizationmentioning

confidence: 98%

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

et al. 2020

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The application of molybdenum oxide in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells in the role of hole selective contact. For modeling-based optimization of such contact, knowledge of the molybdenum oxide defect density of states (DOS) is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of defects related to oxygen-vacancy and of polaron is supported by the results of our opto-electrical characterizations along with the evaluation of previous observations. As part of the study, molybdenum oxide samples have been evaluated after post-deposition thermal treatments. Quantitative results are in agreement with the result of density functional theory showing the presence of a defect band fixed at 1.1 eV below the conduction band edge of the oxide. Moreover, the distribution of defects is affected by post-deposition treatment.

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Section: Chemical and Structural Characterizationmentioning

confidence: 98%

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

et al. 2020

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“…In particular, because of the large numbers of dangling bonds and structural defects, the amorphous MoO 3 is characterized by more easily dissolving in water than does crystalline MoO 3 . Figure a,b shows the etching behavior and the Raman spectra of the deposited MoO 3 film after heat treatment from room temperature to 50, 100, and 200°C, respectively, for 1 h. The MoO 3 thin film (30 nm thick) deposited at room temperature is predominantly amorphous phase (≈950 cm −1 ), and completely disappeared just after dipping into the water . The vigorous and rapid reaction between amorphous MoO 3 and H 2 O may lead to irreversible cracks of graphene .…”

Section: Resultsmentioning

confidence: 99%

An Eco‐Friendly, CMOS‐Compatible Transfer Process for Large‐Scale CVD‐Graphene

Moon

Kim

Son

et al. 2019

Adv Materials Inter

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Since the first realization of graphene synthesis through the chemical vapor deposition (CVD) method in 2009, CVD‐graphene is regarded as a key material in the future electronics industry, and one that requires high standard characteristics. However, because graphene itself is not a semiconductor, therefore it does not have a bandgap, a promising application is considered to integrate its use with semiconductors, rather than completely replace Si or Ge. Although numerous methods for a clean and uniform graphene transfer process are developed, graphene growth and transfer methods that are applicable to current mainstream Si‐based complementary metal‐oxide‐semiconductor (CMOS) manufacturing processes are not yet introduced. This study implements an eco‐friendly and CMOS‐compatible graphene transfer process through water‐soluble inorganic MoO3 film as a supporting layer. Since the monolayer graphene is grown on hydrogen‐terminated semiconductor Ge surface, the MoO3 thin film coated graphene is easily delaminated from the Ge substrate. The separated graphene could be transferred to arbitrary substrate without a chemical wet etching process, and the remaining Ge substrate could be employed for about 50 times multiple reuse for the growth of graphene, without degradation of the crystallinity of the graphene.

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“…There are minor displacements in the peaks position in the Raman spectrum, which are related to the changes in the constant of the strength bonds of the nucleus. The larger constant force leads to positive displacement in the peaks and the smaller constant force leads to a negative displacement in the peaks [14,15]. Figure 5 shows the surface morphology of MoO3 thin film which is studied using FESEM observations in different scales.…”

Section: Structural and Morphological Analysismentioning

confidence: 99%

Gas Sensing and Structural Properties of a Nano-structure MoO3-based Hydrogen Sensor

Kahkesh

Fattah

Rahmani

2019

IJEE

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In this research, thin films of molybdenum trioxide were deposited on a glass substrate using Doctor Blade method. Ammonium Heptamolbudate tetrahydrate (NH4)6Mo7O24 powder is considered as a precursor to this study. Growth of the samples in three main directions of (020), (040) and (060) showed the formation of a layered structure and also the formation of α-phase of molybdenum oxide. In addition, scanning electron microscope imaging of the samples showed flat micro-capsule like structure. Furthermore, gas sensing properties of the fabricated structure were studied in expose to different concentrations of hydrogen gas. The highest and lowest sensitivities were reported about 16 and 91%, for 100 and 1000 ppm of hydrogen gas, respectively, which shows more sensitivity compare to previous studies. Moreover, the fabricated sensor exhibits good stability as well as repeatability for H2 gas detection.

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Synthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties

Cited by 49 publications

References 42 publications

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

An Eco‐Friendly, CMOS‐Compatible Transfer Process for Large‐Scale CVD‐Graphene

Gas Sensing and Structural Properties of a Nano-structure MoO3-based Hydrogen Sensor

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