Highly Transparent Wafer-Scale Synthesis of Crystalline WS<sub>2</sub> Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications

Pawbake, Amit; Waykar, Ravindra; Late, Dattatray J.; Jadkar, Sandesh

doi:10.1021/acsami.5b11325

Cited by 238 publications

(156 citation statements)

References 45 publications

(54 reference statements)

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“…Because of their unique physicochemical properties, such as superior carrier mobility and high photoelectric conversion efficiency, two-dimensional (2D) materials have attracted attention to facilitate the performance improvement of photo detectors. [7] Transition-metal dichalcogenides (TMDs), such as MoS 2 , [8] MoSe 2 , [9] and WS 2 , [10] also have thickness-tunable bandgaps, [11] low dark currents, and relatively high carrier mobilities. For example, ultra-broadband photodetectors using graphene [4] have zero bandgaps with no switching characteristics.…”

mentioning

confidence: 99%

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

Liu

Wang

Fang

et al. 2019

Adv Elect Materials

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data. [2] But as achieving highly miniaturized and integrated devices, the limit of Moore's law era is approaching. Because of their unique physicochemical properties, such as superior carrier mobility and high photoelectric conversion efficiency, two-dimensional (2D) materials have attracted attention to facilitate the performance improvement of photo detectors. [3] However, weak switching characteristics, limited wavelength detection, and instability have restrained applications of 2D materials. For example, ultra-broadband photodetectors using graphene [4] have zero bandgaps with no switching characteristics. [2,5] Graphene-like black phosphorus (BP) has a thickness-modulated direct bandgap from 0.3 eV (bulk) to 2 eV (monolayer), [6] but irreversible ambient oxidization greatly degrades its performance. [7] Transition-metal dichalcogenides (TMDs), such as MoS 2 , [8] MoSe 2 , [9] and WS 2 , [10] also have thickness-tunable bandgaps, [11] low dark currents, and relatively high carrier mobilities. [12] However, their limited bandgaps for solar-blind ultraviolet have become impediments. [13] Hence, materials with suitable switching characteristics, tunable bandgaps, high carrier mobilities, and robust stabilities under ambient conditions are urgently needed.Recently, metal phosphorus trichalcogenides (MPTs) with superior optical, electronic, magnetic, and catalytic properties have garnered tremendous interest because of their unique electronic structures and energy bands. [14] They have a common MPX 3 stoichiometry that spans many elements (M = Cr, Mn, Fe, Co, Ni, Zn or Cd; X = S or Se). The metal cations (M 2+ ) weakly bond the anion group bipyramids [P 2 X 6 ] 4− in a honeycomb structure, while the [P 2 X 6 ] 4− unit is formed by one P atom coordinated with three S (or Se) atoms. The distinctive MPT properties are derived from the electron number in the d orbital, or outermost shell, of the metal elements, and the high spin state of metal atoms resulting from the weak ligand field of the [P 2 X 6 ] 4− unit. [15] As a result, MnPSe 3 flakes have been reported to be a potential spintronic material because it can be transformed from an antiferromagnetic semiconductor to a ferromagnetic semi-metal via carrier doping. [16] Furthermore, the carrier mobility of MnPSe 3 approaches 625.9 cm 2 V −1 s −1 , [14a] which is higher than the aforementioned materials used in field-effect transistors (FETs, where BP has 275 cm 2 V −1 s −1 , [17] MoS 2 has > 200 cm 2 V −1 s −1 , [18] WSe 2 has 200 cm 2 V −1 s −1 [12c] , and WS 2 has 214 cm 2 V −1 s −1[12b] ). By varying the transition Photodetectors fabricated from very thin two-dimensional (2D) materials with high photoelectric conversion efficiency have unprecedented potential to overcome the limitations of conventional photodetectors. In particular, recent interest in 2D metal phosphorus trichalcogenides (MPTs) has derived from their strong light absorption, tunable bandgap, and robust stability. Here, large and atomically thin NiPS 3 flakes, prepared by electrochemical ...

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confidence: 99%

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

Liu

Wang

Fang

et al. 2019

Adv Elect Materials

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“…These 2D materials have shown attractive electronic properties for electronic device applications like OLED, optoelectronics, TFT and sensors2345. In recent years quasi 2D materials like WSe 2 , WS 2 , MoS 2 and MoSe 2 are under intensive research as they also have a unique potential to be used in nanotechnology and nanoscience for various applications.…”

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confidence: 99%

Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

Rehman

Siddiqui

Gul

et al. 2016

Sci Rep

136

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Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.

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“…Furthermore, hot wire CVD technique was adopted to prepare WS 2 nanoparticles thin film. The size of as‐synthesized WS 2 NPs is estimated to be around 25 to 40 nm …”

Section: Synthesismentioning

confidence: 99%

“…The 0D TMDs‐based thin films show good response to humidity and good photosensitivity. It was found that the resistance of the films decreases with increasing relative humidity, while photonic‐sensitive current recovery also open up new opportunities for photodetection ( Figure a and b) …”

Section: Propertiesmentioning

confidence: 99%

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Emerging 0D Transition‐Metal Dichalcogenides for Sensors, Biomedicine, and Clean Energy

Setyawati

Zou

et al. 2017

Small

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Following research on two-dimensional (2D) transition metal dichalcogenides (TMDs), zero-dimensional (0D) TMDs nanostructures have also garnered some attention due to their unique properties; exploitable for new applications. The 0D TMDs nanostructures stand distinct from their larger 2D TMDs cousins in terms of their general structure and properties. 0D TMDs possess higher bandgaps, ultra-small sizes, high surface-to-volume ratios with more active edge sites per unit mass. So far, reported 0D TMDs can be mainly classified as quantum dots, nanodots, nanoparticles, and small nanoflakes. All exhibited diverse applications in various fields due to their unique and excellent properties. Of significance, through exploiting inherent characteristics of 0D TMDs materials, enhanced catalytic, biomedical, and photoluminescence applications can be realized through this exciting sub-class of TMDs. Herein, we comprehensively review the properties and synthesis methods of 0D TMDs nanostructures and focus on their potential applications in sensor, biomedicine, and energy fields. This article aims to educate potential adopters of these excitingly new nanomaterials as well as to inspire and promote the development of more impactful applications. Especially in this rapidly evolving field, this review may be a good resource of critical insights and in-depth comparisons between the 0D and 2D TMDs.

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Highly Transparent Wafer-Scale Synthesis of Crystalline WS₂ Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications

Cited by 238 publications

References 45 publications

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

Emerging 0D Transition‐Metal Dichalcogenides for Sensors, Biomedicine, and Clean Energy

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Highly Transparent Wafer-Scale Synthesis of Crystalline WS2 Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications

Cited by 238 publications

References 45 publications

A Robust 2D Photo‐Electrochemical Detector Based on NiPS3 Flakes

A Robust 2D Photo‐Electrochemical Detector Based on NiPS3 Flakes

Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

Emerging 0D Transition‐Metal Dichalcogenides for Sensors, Biomedicine, and Clean Energy

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Highly Transparent Wafer-Scale Synthesis of Crystalline WS₂ Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes