Influence of substrate properties on the growth of titanium films: part III

Oberhauser, Paul; Abermann, R.

doi:10.1016/s0040-6090(99)00270-9

Cited by 11 publications

(1 citation statement)

References 18 publications

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“…Abermann and co-workers 16,17) investigated the formation of thin Ti-oxide films on alumina substrates. These films were then used as templates for deposition of pure Ti layers.…”

Section: Resultsmentioning

confidence: 99%

Phase Formation and Structural Sequence of Highly-Oriented MBE-Grown NiTiCu Shape Memory Thin Films

et al. 2002

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We present a study demonstrating the capability for controlled shape memory thin film growth using molecular beam epitaxy. Here, NiTiCu alloy films were grown which are known to exhibit the martensitic transformation well above room temperature. Remarkably, the microstructure of these films was found to be very different compared to conventionally sputtered polycrystalline films: here, the crystallites are highly oriented within ±3 • along the film plane normal. Moreover, a splitting of the martensite orientation is detected indicating the selection of two specific sets of martensite variants. Mechanical stress measurements reveal a high ratio of recoverable stress even for films below 500 nm thickness. These results open up the possibility to specifically modify the microstructure and crystallographic orientation of shape memory thin films and thus suggest promising characteristics, especially in regard to their superelastic behavior.

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“…Abermann and co-workers 16,17) investigated the formation of thin Ti-oxide films on alumina substrates. These films were then used as templates for deposition of pure Ti layers.…”

Section: Resultsmentioning

confidence: 99%

Phase Formation and Structural Sequence of Highly-Oriented MBE-Grown NiTiCu Shape Memory Thin Films

et al. 2002

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The Effect of Nonuniform Chemistry on Interfacial Fracture Toughness

Kennedy

Bahr

Moody

2007

Metall Mater Trans A

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The adhesion of metallic-ceramic interfaces is generally ascribed to the mixture of several mechanisms, including chemical bonding, texture, strain transfer, and plasticity. This study examines the impact of alterations in chemical bonding along an interface on the nanometer scale on the interfacial fracture energy. Using a well-characterized system of W/SiO 2 , small areas of the interface were masked with polymer tubes to prohibit the area from adhering well to the W film. This showed that the interfacial fracture energy was proportional to the area of higher adhesion. This finding was then used to study the growth of a Ti interlayer used for adhesion promotion in a Pt/SiO 2 system. Because the adhesion energy slowly grew from values near the Pt/SiO 2 to values typical of Ti/SiO 2 , the growth mechanism for DC magnetron sputtering of thin film Ti on SiO 2 was inferred to be island growth instead of layer-by-layer growth.

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