Influence of substrate cooling on ion conductivity of tantalum oxide thin films prepared by reactive sputtering using water vapor injection

Ito, Yusuke; Abe, Yoshio; Kawamura, Midori; Kim, Kyung Ho; Kiba, Takayuki

doi:10.1016/j.tsf.2020.138276

Cited by 5 publications

(4 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From composition analyses (Figure 2), the deposition of tantalum oxide films tends to the stoichiometric Ta2O5 compound. This cross-section microstructure agrees with observations performed by Ito et al, who sputter-deposited tantalum pentoxide films at room temperature [49]. The authors similarly noticed a columnar structure corresponding to the first zone of structural zone models for films prepared at room temperature with a density lower than that of the bulk Ta2O5 [50].…”

Section: Composition and Structuresupporting

confidence: 90%

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Martin,

Cote,

Gavoille

et al. 2023

Coatings

View full text Add to dashboard Cite

Tantalum oxide thin films are deposited by DC reactive magnetron sputtering from a tantalum metallic target and argon + oxygen. The oxygen gas is pulsed during the deposition with a constant pulsing period T = 10 s, whereas the introduction time of the reactive gas, namely the tON injection time, is systematically changed from 0 to 100% of T. Therefore, composition of as-deposited TaOx films is continuously changed from pure metallic tantalum to the over-stoichiometric Ta2O5 material. Films adopt the body-centered cubic structure (metallic Ta) for the lowest tON injection time values (oxygen stoichiometry x < 1.0) and become amorphous for the longest ones. It is shown that the tON injection time is a key parameter to deposit either homogeneous tantalum oxides, or periodic Ta/TaOx multilayers with alternations close to 3 nm. Optical transmittance in the visible region of the film/glass substrate system and electrical conductivity vs. temperature both exhibit a gradual evolution from metallic (σ300K = 8.17 × 105 S m−1 with an opaque behavior) to semiconducting (σ300K = 1.97 × 103 S m−1 with a semi-transparent transmittance) and finally to dielectric properties (σ300K < 10−5 S m−1 for interferential films) as a function of the oxygen concentration in the films.

show abstract

Section: Composition and Structuresupporting

confidence: 90%

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Martin,

Cote,

Gavoille

et al. 2023

Coatings

View full text Add to dashboard Cite

show abstract

“…[ 26 ] In addition to these specific bands, other bands appearing between 700 and 1,000 are also attributable to O ≡ 3Ta and Ta–O–Ta bonds, as indicated by the other relevant investigation done on Ta 2 O 5 . [ 27 ] In addition to the confirmation of Ta bonds, transmission bands in this region are also indicative of the lanthanide oxide bonds. For LRE 3+ ‐doped Ta 2 O 5 precursor, some of the conspicuous bands are located at 855 cm −1 referring to N–H wag of the primary and secondary amines, 1025 cm −1 showing the C–N stretch of the aliphatic amines, and 1407 cm −1 expressing the presence of C–H rock associated with the alkanes.…”

Section: Resultsmentioning

confidence: 99%

Expounded Photoelectric and Electrochemical Profiling of LRE³⁺:β‐Ta₂O₅ (Ln³⁺ = Ce³⁺, Pr³⁺, Nd³⁺) for High Performance in Energy Systems

et al. 2023

View full text Add to dashboard Cite

Light rare earth (LRE3+) ions‐doped Ta2O5 semiconductor material is synthesized via coprecipitation method with the bandgap energy of 3.94–4.05 eV and an orthorhombic geometry with 74.49 nm size. The rare earth‐modified Ta2O5 improves the photovoltaic functionality of the fully ambient perovskite solar cell by efficient extraction of electrons and blocking of the holes. The device achieved an efficiency of 13.36% with 63% of fill factor and negligible hysteresis index. LRE3+ triply doped Ta2O5 is used for the fabrication of an electrode by decorating on the nickel foam. This electrode outperforms the conventionally used materials by achieving a specific capacitance of 517.5 F g−1 marked by fast reaction kinetics and diffusion with an equivalent series resistance of 0.18 Ω. LRE3+‐doped Ta2O5 is proved to be an excellent electrode material with the characteristic electric double‐layer capacitance behavior in conjugation with the Faradic pseudocapacitive behavior. Finally, the electrocatalysis using this material indicates its excellence as a H2 generating catalyst in comparison to O2 generation with the smallest overpotential and Tafel slope values of 143 mV and 125.3 mV dec−1, respectively. The designed electrode expressed an exceptional stability over ambient conditions as well as inside an electrolyte.

show abstract

“…Nickel oxide films (II) were deposited on a conductive glass substrate with a transparent tin oxide sublayer SnO2 in two modes using bis-(ethylcyclopentadienyl) nickel (EtCp)2Ni, according to the procedure developed and described in works [9,10]: mode 1 -precipitation in an argonic acid atmosphere "(EtCp)2Ni + Ar + 5 vol% O2" in the precipitation temperature range 280-410ºC thickness 15, 45, 170 nm; mode 2 -in an argonic acid atmosphere with small ozone additives "(EtCp)2Ni + Ar + 5 vol% O2 + 0.1 vol% O3" at a temperature 330ºC thickness 170 nm. The thickness of the resulting nickel oxide layers was determined by a direct method of depicting the layer profile obtained by a raster electron microscope Zeiss Supra 55.…”

Section: Materials and Methods Of Researchmentioning

confidence: 99%

Surface Modification of Nickel Oxide (II) Thin Films Obtained by Gas-Phase Deposition

Strekalovskaya

Ludmila

Kondrateva

et al. 2023

KEM

View full text Add to dashboard Cite

The technology of producing stable electrochromic anode nanocomposite thin film coatings based on nickel oxide (II) has been developed, which are used as active layers for modulating light flux in the manufacture of various technical devices. The method involves introduction of carbon nanoparticles (carbon-containing particles) into outer layers of nickel oxide (II) thin films obtained by gas-phase deposition under conditions of cathodic polarization in potentiostatic mode in aqueous media containing water-soluble hydroxylated fullerene derivatives - fullerenol С60(ОН)24, without change of their optical density in the initial state. The technology of the method realization allows to effectively change electrochromic properties of nickel oxide (II) thin films and to obtain a nanocomposite, which is a matrix of a thin layer of nickel oxide (II), doped with carbon nanoparticles, with increased contrast and having the ability to maintain a colored state after switching off polarization under open chain conditions for a long time without energy consumption in solution and in air, i.e., characterized by an “optical memory effect”.

show abstract

Influence of substrate cooling on ion conductivity of tantalum oxide thin films prepared by reactive sputtering using water vapor injection

Cited by 5 publications

References 18 publications

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Expounded Photoelectric and Electrochemical Profiling of LRE³⁺:β‐Ta₂O₅ (Ln³⁺ = Ce³⁺, Pr³⁺, Nd³⁺) for High Performance in Energy Systems

Surface Modification of Nickel Oxide (II) Thin Films Obtained by Gas-Phase Deposition

Contact Info

Product

Resources

About

Influence of substrate cooling on ion conductivity of tantalum oxide thin films prepared by reactive sputtering using water vapor injection

Cited by 5 publications

References 18 publications

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Expounded Photoelectric and Electrochemical Profiling of LRE3+:β‐Ta2O5 (Ln3+ = Ce3+, Pr3+, Nd3+) for High Performance in Energy Systems

Surface Modification of Nickel Oxide (II) Thin Films Obtained by Gas-Phase Deposition

Contact Info

Product

Resources

About

Expounded Photoelectric and Electrochemical Profiling of LRE³⁺:β‐Ta₂O₅ (Ln³⁺ = Ce³⁺, Pr³⁺, Nd³⁺) for High Performance in Energy Systems