Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing
Nicolas Martin,
Jean-Marc Cote,
Joseph Gavoille
et al.
Abstract:Tantalum oxide thin films are deposited by DC reactive magnetron sputtering from a tantalum metallic target and argon + oxygen. The oxygen gas is pulsed during the deposition with a constant pulsing period T = 10 s, whereas the introduction time of the reactive gas, namely the tON injection time, is systematically changed from 0 to 100% of T. Therefore, composition of as-deposited TaOx films is continuously changed from pure metallic tantalum to the over-stoichiometric Ta2O5 material. Films adopt the body-cent… Show more
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