1998
DOI: 10.1103/physrevb.58.1442
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Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedGaN/Al0.28

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Cited by 17 publications
(4 citation statements)
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“…We find their interpretation surprising, in view of our own earlier results. 3,4 As illustrated in a schematic band diagram in Fig. 1, the PL emission related to electrons in the twodimensional electron gas ͑2DEG͒ recombining with free or localized holes is expected to occur below the GaN band-gap energy, as typically found in earlier work on this material system, 3,4 as well as in other systems like InGaAs/InP and AlGaAs/GaAs.…”
Section: ͓S0003-6951͑00͒04705-7͔mentioning
confidence: 81%
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“…We find their interpretation surprising, in view of our own earlier results. 3,4 As illustrated in a schematic band diagram in Fig. 1, the PL emission related to electrons in the twodimensional electron gas ͑2DEG͒ recombining with free or localized holes is expected to occur below the GaN band-gap energy, as typically found in earlier work on this material system, 3,4 as well as in other systems like InGaAs/InP and AlGaAs/GaAs.…”
Section: ͓S0003-6951͑00͒04705-7͔mentioning
confidence: 81%
“…3,4 As illustrated in a schematic band diagram in Fig. 1, the PL emission related to electrons in the twodimensional electron gas ͑2DEG͒ recombining with free or localized holes is expected to occur below the GaN band-gap energy, as typically found in earlier work on this material system, 3,4 as well as in other systems like InGaAs/InP and AlGaAs/GaAs. 2,5,6 The bandbending caused by the 2DEG typically reduces the PL recombination energy more than the increase due to confinement in the interface notch.…”
Section: ͓S0003-6951͑00͒04705-7͔mentioning
confidence: 81%
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“…A fluctuating field of the order 100 V/cm in the QW plane would thus be sufficient for impact excitation of excitons, provided energetic carriers are present in the initial relaxation process. In reality these fluctuating fields are much larger, of the order 10 3 -10 5 V/cm, depending on the lateral extent of the short range localization potentials [31]. Already a random distribution of donors at a total residual density of 10 17 cm -3 is sufficient to cause local fields of the order kV/cm in the QW plane.…”
Section: The Detailed Recombination Process Excitons or Free Carriers?mentioning
confidence: 99%