Comment on “Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure” [Appl. Phys. Lett. <b>73</b>, 2471 (1998)]

Ḿonemar, B.; Bergman, J. P.; Holtz, P. O.

doi:10.1063/1.125849

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…This form of the temperature dependence of the energy gap was proposed by Varshni [15] and later successfully applied to describe E g (T ) in many semiconductors. We can fit the bandgap temperature dependence (M047) neglecting the DBE binding energy according to equation ( 2) and we obtain E g (0) = 3.4501 eV, with α c = 1.24 × 10 −3 eV K −1 and T 0 = 1559.23 K. These values are very close to E g (0) = 3.503 eV, α c = 5.08 × 10 −4 eV K −1 and T 0 = 996 K reported by Monemar [16]. Figure 3 shows an Arrhenius plot of the nearbandgap luminescence intensity for sample M047 versus 1/K.…”

Section: Photoluminescencesupporting

confidence: 83%

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

Yan

Yang

et al. 2002

Semicond. Sci. Technol.

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A detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal flat SiC (0001) substrates by molecular beam epitaxy, has been carried out using photoluminescence and Raman scattering techniques. The 11 K photoluminescence spectra of the GaN film grown on the vicinal SiC (0001) substrate show a strong and sharp near-bandgap peak (full width at half maximum (FWHM) ∼ 16 meV). This feature contrasts with that of the GaN film grown on the nominal flat SiC (0001) substrate where the 11 K photoluminescence spectra exhibit the near-bandgap peak (FWHM ∼ 25 meV) and the intensity is approximately seven times weaker than that of the vicinal film sample. The redshift of the near-bandgap peak associated with excitons bound to shallow donors is related to the stress caused by both the lattice mismatch and the thermal expansion coefficient difference between GaN and SiC substrates. The measured thermal activation energy of the shallow donor of 33.4 meV is determined by using an Arrhenius plot of the near-bandgap luminescence versus 1/T from the slope of the graph at high temperature. The temperature dependence of the FWHM of the near-bandgap luminescence has also been studied. The Raman scattering measurements from the vicinal film reveal that the E 2 phonon peak is strengthened and the A 1 (LO) phonon peak is shifted towards the low-frequency side with enhanced intensity, in comparison to that from the nominal flat film, suggesting a reduction in the density of defects and a lower free carrier concentration in the vicinal GaN film.

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Section: Photoluminescencesupporting

confidence: 83%

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

Yan

Yang

et al. 2002

Semicond. Sci. Technol.

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Fermi edge singularity observed in GaN/AlGaN heterointerfaces

Akopian

Vardi

Bahir

et al. 2009

Applied Physics Letters

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We observe sharp spectral lines, at energies which are higher than the bulk GaN band gap, in the photoluminescence and photoluminescence excitation spectra of GaN/AlGaN heterointerfaces grown by molecular beam epitaxy. The spectra and their temperature dependence are in accord with the Fermi edge singularity expected for two dimensional electron gas systems. The associated localized hole energy in the AlGaN interface side was extracted directly from the spectra.

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Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

Schmult

Solovyev

Wirth

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Landau level splitting in a two-dimensional electron gas (2DEG) confined in an ultrapure GaN/AlGaN heterostructure grown by molecular beam epitaxy on bulk GaN is verified spectroscopically. The Landau level fan reconstructed from magneto-photoluminescence (PL) data yields an effective mass of 0.24m0 for the 2D electrons. Narrow excitonic PL line widths < 100 μeV, an atomically flat surface of the layer stack, as well as the absence of the 2DEG in the dark environment, are important ancillary experimental findings while focusing on magneto-PL investigations of the heterostructure. Simultaneously recorded Shubnikov-de Haas and magneto-PL intensity oscillations under steady UV illumination exhibit an identical frequency and allow for two independent ways of determining the 2D density.

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Comment on “Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure” [Appl. Phys. Lett. 73, 2471 (1998)]

Cited by 3 publications

References 7 publications

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

Fermi edge singularity observed in GaN/AlGaN heterointerfaces

Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

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