2015
DOI: 10.1016/j.jallcom.2015.05.087
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Influence of oxidation on the dielectric and microwave absorption properties of the milled Ti3SiC2 powders

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Cited by 24 publications
(12 citation statements)
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“…The main reaction mechanism of the electroreduction of TBFS/TiO 2 /C to produce Ti 5 Si 3 /TiC can be generally summarized by reactions (6)- (10). The reaction mechanism is similar to the electrochemical synthesis of Ti 5 Si 3 as discussed above.…”
Section: Electrochemical Production Of Ti 5 Si 3 /Ticmentioning
confidence: 94%
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“…The main reaction mechanism of the electroreduction of TBFS/TiO 2 /C to produce Ti 5 Si 3 /TiC can be generally summarized by reactions (6)- (10). The reaction mechanism is similar to the electrochemical synthesis of Ti 5 Si 3 as discussed above.…”
Section: Electrochemical Production Of Ti 5 Si 3 /Ticmentioning
confidence: 94%
“…6,7) Besides, it is well known that Ti 3 SiC 2 is a typical MAX phase, which possesses the advantages of both metals and ceramics, such as low density (4.5 g·cm ), high strength and modulus (340 GPa), good thermal and electrical conductivity, damage tolerance at room temperature and excellent resistance to oxidation up to 1173 K. [8][9][10][11] However, the application of Ti 3 SiC 2 was limited because of its poor wear resistance and low hardness. 12) Many studies have been conducted to improve the hardness and wear resistance of Ti 3 SiC 2 , [13][14][15] and it was found that Ti 5 Si 3 can be used as reinforce particles for Ti 3 SiC 2 due to their similar thermal expansion coef cients.…”
Section: Introductionmentioning
confidence: 99%
“…6 gives the complex permittivity of as-received KD-I SiC preform, which exhibits high ε 0 value of 13-14 and ε ″ value of 11-17. This is mainly attributed to the nano-sized PyC surface layer around the KD-I SiC fiber [31], which contributes to enhancing the electrical conductivity and complex permittivity of the SiC fabrics. Fig.…”
Section: Dielectric Properties Of Sic F /Sic Composites With Ti 3 Sicmentioning
confidence: 99%
“…Ceramics are good candidates because of the excellent high temperature stability and oxidation resistance. Ti 3 -SiC 2 is a promising absorbent to be applied at high temperature due to its both metallic and ceramic merits, such as excellent electric conductivity, low density, high melt point and excellent high temperature oxidation resistance [7][8][9][10]. The oxidation behavior of Ti 3 SiC 2 has been investigated, the results demonstrate Ti 3 SiC 2 presents excellent oxidation resistance at high temperature [11][12][13].…”
Section: Introductionmentioning
confidence: 99%