Morphology engineering has been recognized as an effective way to attain highly efficient and stable hybrid perovskite solar cells.

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Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

Crystalline-silicon solar cells have dominated the photovoltaics market for the past several decades. One of the long standing challenges is the large contribution of silicon wafer cost to the overall module cost. Here, we demonstrate a simple process for making high-purity solar-grade silicon films directly from silicon dioxide via a one-step electrodeposition process in molten salt for possible photovoltaic applications. High-purity silicon films can be deposited with tunable film thickness and doping type by varying the electrodeposition conditions. These electrodeposited silicon films show about 40 to 50% of photocurrent density of a commercial silicon wafer by photoelectrochemical measurements and the highest power conversion efficiency is 3.1% as a solar cell. Compared to the conventional manufacturing process for solar grade silicon wafer production, this approach greatly reduces the capital cost and energy consumption, providing a promising strategy for low-cost silicon solar cells production.