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2015
DOI: 10.1016/j.ceramint.2014.12.108
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Improvement of mechanical and dielectric properties of PIP-SiCf/SiC composites by using Ti3SiC2 as inert filler

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Cited by 38 publications
(16 citation statements)
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“…4a and b, the composites with filler show an average complex permittivity of 19.0-j19.0 and tan d of 1.01 at 10 GHz, which are higher than the composites without filler, whose corresponding values are 17.0-j16.0 and 0.94 respectively. On one hand, the Ti 3 SiC 2 filler with a relative high e 0 value contributes to enhancing the e 0 of the composites according to the mixing rules [24]. On the other hand, quantities of interfaces are formed between the Ti 3 SiC 2 particles and SiC matrix with the incorporation of Ti 3 SiC 2 filler.…”
Section: Dielectric Properties Of Sic F /Sic Composites At High Tempementioning
confidence: 99%
See 3 more Smart Citations
“…4a and b, the composites with filler show an average complex permittivity of 19.0-j19.0 and tan d of 1.01 at 10 GHz, which are higher than the composites without filler, whose corresponding values are 17.0-j16.0 and 0.94 respectively. On one hand, the Ti 3 SiC 2 filler with a relative high e 0 value contributes to enhancing the e 0 of the composites according to the mixing rules [24]. On the other hand, quantities of interfaces are formed between the Ti 3 SiC 2 particles and SiC matrix with the incorporation of Ti 3 SiC 2 filler.…”
Section: Dielectric Properties Of Sic F /Sic Composites At High Tempementioning
confidence: 99%
“…The specific weight ratios of each component of SiC f /SiC composites are given in Table 1. It is worth noting that the weak proportion of micropores can be negligible in adjusting the dielectric properties owing to the rather low permittivity compared with other components of the composites [24].…”
Section: Microstructures and Mechanical Properties Of Sic F /Sic Compmentioning
confidence: 99%
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“…The microwave absorption and mechanical properties of SiC CFRCMCs depend on complex permittivity, electrical conductivity and free carbon content of SiC bers, as well as interphase and matrix. The SiC ceramics matrix can be fabricated by chemical vapor in ltration (CVI) [11] , precursor impregnation and pyrolysis (PIP) [12] , liquid silicon in ltration (LSI) [13] and melt in ltration (MI) [14] . Among these techniques, the PIP method has many advantages, for instance, the designable molecular precursor of polymer derived ceramics (PDC), safe in operation and the feasibility of manufacture in large complex components.…”
Section: Introductionmentioning
confidence: 99%