Influence of implantation temperature and surface protection on tellurium implantation in GaAs

Harris, James S.; Eisen, F. H.; Welch, B.M.; Haskell, J. D.; Pashley, R.; Mayer, J. W.

doi:10.1063/1.1654271

Cited by 92 publications

(19 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A long treatment at typical growth temperatures may remove one type of defect but has little effect on the other͑s͒. 21 As with PL efficiency and linewidth, it is important to compare the optimal annealing temperature between samples of identical structure. It is likely also beneficial to use PL test structures that reproduce the thermal cycling an active region experiences during device growth.…”

Section: Overannealing Effects In Gainnas"sb… Alloys and Their Importmentioning

confidence: 99%

Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications

Bank

Yuen

Bae

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

The photoluminescence efficiency and linewidth are well-established metrics for characterizing potential laser active regions. We demonstrate the critical importance of a new parameter for predicting the performance of dilute-nitride lasers: the “optimal” postgrowth annealing temperature, defined as the annealing temperature giving the highest photoluminescence efficiency. We validate this assertion with two 1.55μm edge-emitting GaInNAsSb lasers containing active regions with different optimal annealing temperatures. Although both active regions showed comparable photoluminescence efficiency and linewidth under optimal annealing conditions, laser performance was significantly different. The room-temperature threshold current density for the active region with higher optimal annealing temperature was 630A∕cm2, compared with 2380A∕cm2 for the sample with lower optimal annealing temperature. We conclude that overannealing of the gain region during upper cladding growth is the responsible mechanism. The dependence of the optimal annealing temperature on composition and growth conditions is also discussed.

show abstract

Section: Overannealing Effects In Gainnas"sb… Alloys and Their Importmentioning

confidence: 99%

Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications

Bank

Yuen

Bae

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…This is due p r i m a r i l y to the high anneal temperature used (900~ and not to the quality of the coatings, Harris et al (4) have reported a nne'aling GaAs at 750~ using Si3N4 coatings with little PL degradation, despite having problems with SigN4 adhering to the GaAs. This is due p r i m a r i l y to the high anneal temperature used (900~ and not to the quality of the coatings, Harris et al (4) have reported a nne'aling GaAs at 750~ using Si3N4 coatings with little PL degradation, despite having problems with SigN4 adhering to the GaAs.…”

Section: Fifl 2 Thermal Etch Pits Seen At 30 ~ Incidence In (100) Smentioning

confidence: 99%

Ion‐Implanted Gallium‐Arsenide‐Phosphide Surfaces

Arnoldussen

Greenstein

1977

J. Electrochem. Soc.

View full text Add to dashboard Cite

Study of thermal degradation of mechanical surface perfection and surface photoluminescence (PL) of GaAs0.6P0.4 samples, some of which received high dose room temperature Zn + or Ar + ion implants and others of which were unimplanted, strongly suggests that PL degradation and thermal etch pit formation have a common origin. Thermal etch pits are believed to nucleate at dislocations reaching the surface and these same dislocations act as sources of vacancy injection into the bulk, resulting in PL degradation. Ion implants rendering the surface amorphous are found to retard formation of thermal etch pits and to retard PL degradation during high temperature anneals. The model presented may explain the unusual dish-shaped p-n junction profiles observed when Zn + is implanted into n-type GaAs0.6P0.4 at room temperature and annealed.* Electrochemical Society Active Member.

show abstract

“…SiO 2 film and SiN x film have also been used as the diffusion mask for selective masked diffusion of Zn. 5,7 However, from the standpoint of thermal mismatch and gallium-outdiffusion, [7][8][9][10][11][12][13][14] it is to be expected that aluminum nitride ͑AlN͒ would be preferable to SiO 2 , PSG or SiN x for both the anneal cap and the diffusion mask. In film etching, Zn x SiO y film deposited on an AlN film can be removed by means of preferential etching in buffered-hydrofluoric-acid, and the preferential-etching technique is useful for device processing.…”

Section: Introductionmentioning

confidence: 99%

Open tube zinc diffusion into GaAs0.8P0.2 using AlN and SiNx cap films

Ogihara

Taninaka

Nakamura

1996

Journal of Applied Physics

View full text Add to dashboard Cite

The open-tube diffusion of zinc in GaAs 0.8 P 0.2 from a zinc-doped silica film was investigated in detail. Aluminum nitride ͑AlN͒ and silicon nitride ͑SiN x ͒ films were used as the anneal caps. The dependence of diffusion depth on the thickness of an AlN-cap was found to differ from its dependence on SiN x -cap thickness. The selective masked diffusion of zinc using an AlN diffusion-mask was also systematically studied. The diffusion depth in selective masked diffusion was found to depend on both AlN-cap thickness and AlN-diffusion-mask thickness. The experimental results suggest that diffusion depth is not necessarily governed by either cap thickness or diffusion-mask thickness. From this standpoint, the role of film stress on diffusion depth was then quantitatively investigated. It was found that diffusion depth can be scaled well with total film stress in the measured film-thickness range. In this sense, it can be concluded that total film stress is the primary factor that determines the diffusion depth under the measured diffusion conditions.

show abstract

Influence of implantation temperature and surface protection on tellurium implantation in GaAs

Abstract: GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2 or Si3N4 protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4 protective layer.

Cited by 92 publications

References 7 publications

Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications

Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications

Ion‐Implanted Gallium‐Arsenide‐Phosphide Surfaces

Open tube zinc diffusion into GaAs0.8P0.2 using AlN and SiNx cap films

Contact Info

Product

Resources

About