Ion‐Implanted Gallium‐Arsenide‐Phosphide Surfaces

Abstract

Study of thermal degradation of mechanical surface perfection and surface photoluminescence (PL) of GaAs0.6P0.4 samples, some of which received high dose room temperature Zn + or Ar + ion implants and others of which were unimplanted, strongly suggests that PL degradation and thermal etch pit formation have a common origin. Thermal etch pits are believed to nucleate at dislocations reaching the surface and these same dislocations act as sources of vacancy injection into the bulk, resulting in PL degradation. Ion implants rendering the surface amorphous are found to retard formation of thermal etch pits and to retard PL degradation during high temperature anneals. The model presented may explain the unusual dish-shaped p-n junction profiles observed when Zn + is implanted into n-type GaAs0.6P0.4 at room temperature and annealed.* Electrochemical Society Active Member.

Thermal annealing behaviours of GaP(001) surface

“…In the present case, we consider that annealing-induced PL degradation in GaP(0 0 1) results from production of competing nonradiative surface recombination centres of some sort, including P vacancies produced at the near surface. It was already reported that PL degradation and thermal etch pit formation have a common origin [34]. Thermal etch pits are believed to nucleate at dislocations reaching the surface and these same dislocations act as sources of vacancy injection into the bulk GaP, resulting in PL degradation [3].…”

“…It was already reported that PL degradation and thermal etch pit formation have a common origin [34]. Thermal etch pits are believed to nucleate at dislocations reaching the surface and these same dislocations act as sources of vacancy injection into the bulk GaP, resulting in PL degradation [3].…”

“…Arnoldussen and Greenstein [3] studied thermal degradation of mechanical surface perfection and surface photoluminescence (PL) of GaAsP samples, some of which received high dose room-temperature Zn + or Ar + ion implants. They observed that PL degradation and thermal etch pit formation have a common origin.…”

“…A review of the literature also suggested that there may be an enhancement in PL strength during GaAs photowashing[32,33], where the photowashing in flowing water is considered to be capable of removing Ga 2 O 3 to some extent, possibly via a photoactivated process.In the present case, we consider that annealing-induced PL degradation in GaP(0 0 1) results from production of competing nonradiative surface recombination centres of some sort, including P vacancies produced at the near surface. It was already reported that PL degradation and thermal etch pit formation have a common origin[34]. Thermal etch pits are believed to nucleate at dislocations reaching the surface and these same dislocations act as sources of vacancy injection into the bulk GaP, resulting in PL degradation[3].…”