Abstract:The photoluminescence efficiency and linewidth are well-established metrics for characterizing potential laser active regions. We demonstrate the critical importance of a new parameter for predicting the performance of dilute-nitride lasers: the “optimal” postgrowth annealing temperature, defined as the annealing temperature giving the highest photoluminescence efficiency. We validate this assertion with two 1.55μm edge-emitting GaInNAsSb lasers containing active regions with different optimal annealing temper… Show more
“…This result is very striking, in that it runs contrary to all earlier reports of rapid degradation with increasing nitrogen content. We have found that adding more nitrogen is a better way of extending laser wavelength than adding indium [86], resulting in the lowest threshold 1.55 µm dilute nitride lasers to date.…”
Section: Wwwpss-bcommentioning
confidence: 96%
“…In our case the lasing wavelength was successfully extended to 1.55 µm by increasing the nitrogen content [89]. It is worth noting that our initial attempts to extend the wavelength by increasing indium content were less successful, resulting in higher threshold current density, even though the optical quality of the PL sample was equivalent [86]. We suggest that the higher-indium GaInNAsSb active regions are damaged by the in-situ anneal during laser growth, and their weak thermal robustness is evidenced by the lower optimal anneal temperature of the PL samples.…”
Section: Gainnassb High Power Edge-emitting Lasersmentioning
confidence: 96%
“…In order to improve laser performance, room temperature PL measurements were performed for GaInNAsSb/GaNAs/GaAs QW structures grown at different temperatures [84], under different arsenic and antimony fluxes [85], and annealed under different conditions [86].…”
Section: Growth Optimization Of Long Wavelength Gainnassb/ganas Quantmentioning
In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 -1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 -1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.
“…This result is very striking, in that it runs contrary to all earlier reports of rapid degradation with increasing nitrogen content. We have found that adding more nitrogen is a better way of extending laser wavelength than adding indium [86], resulting in the lowest threshold 1.55 µm dilute nitride lasers to date.…”
Section: Wwwpss-bcommentioning
confidence: 96%
“…In our case the lasing wavelength was successfully extended to 1.55 µm by increasing the nitrogen content [89]. It is worth noting that our initial attempts to extend the wavelength by increasing indium content were less successful, resulting in higher threshold current density, even though the optical quality of the PL sample was equivalent [86]. We suggest that the higher-indium GaInNAsSb active regions are damaged by the in-situ anneal during laser growth, and their weak thermal robustness is evidenced by the lower optimal anneal temperature of the PL samples.…”
Section: Gainnassb High Power Edge-emitting Lasersmentioning
confidence: 96%
“…In order to improve laser performance, room temperature PL measurements were performed for GaInNAsSb/GaNAs/GaAs QW structures grown at different temperatures [84], under different arsenic and antimony fluxes [85], and annealed under different conditions [86].…”
Section: Growth Optimization Of Long Wavelength Gainnassb/ganas Quantmentioning
In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 -1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 -1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.
“…Annealing is well-known to significantly improve the optical quality of dilute nitrides, but also severe degradation by overannealing has been reported [12]. The As flux has been shown to be one of the most important growth parameters during growth of GaInNAs QWs [3,4].…”
“…This has persuaded many investigators to deal with dilute nitride alloys (i.e., Ga 1−y In y N x As 1−x , with a nitrogen concentration x ≤ 6%) [8,9], in order to avoid lattice-distortion problems. The result is an almost exclusive concentration on telecommunication applications for * Tel.…”
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