Influence of illumination on the grain boundary recombination velocity in silicon

Oualid, J.; Singal, C. M.; Dugas, J.; Crest, J.P.; Amzil, H.

doi:10.1063/1.333161

Cited by 49 publications

(19 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Oualid et al 9 developed a model based entirely on Shockley-Read-Hall ͑SRH͒ statistics that did not rely on an assumption of quasiequilibrium. Although their analysis requires an iterative solution, it is otherwise quite general and offers great insight into the effect of grain boundaries within quasineutral regions.…”

Section: Review Of Past Modelsmentioning

confidence: 99%

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

Edmiston

Heiser

Sproul

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

This article provides a theoretical investigation of recombination at grain boundaries in both bulk and p-n junction regions of silicon solar cells. Previous models of grain boundaries and grain boundary properties are reviewed. A two dimensional numerical model of grain boundary recombination is presented. This numerical model is compared to existing analytical models of grain boundary recombination within both bulk and p-n junction regions of silicon solar cells. This analysis shows that, under some conditions, existing models poorly predict the recombination current at grain boundaries. Within bulk regions of a device, the effective surface recombination velocity at grain boundaries is overestimated in cases where the region around the grain boundary is not fully depleted of majority carriers. For vertical grain boundaries (columnar grains), existing models are shown to underestimate the recombination current within p-n junction depletion regions. This current has an ideality factor of about 1.8. An improved analytical model for grain boundary recombination within the p-n junction depletion region is presented. This model considers the effect of the grain boundary charge on the electric field within the p-n junction depletion region. The grain boundary charge reduces the p-n junction electric field, at the grain boundary, enhancing recombination in this region. This model is in agreement with the numerical results over a wide range of grain boundary recombination rates. In extreme cases, however, the region of enhanced, high ideality factor recombination can extend well outside the p-n junction depletion region. This leads to a breakdown of analytical models for both bulk and p-n junction recombination, necessitating the use of the numerical model.

show abstract

Section: Review Of Past Modelsmentioning

confidence: 99%

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

Edmiston

Heiser

Sproul

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Two definitions of surface are used in the literature: the surface defined as a dead-layer thickness Z T (non-radiative region) with a surface recombination velocity V s [6][7][8]; and that defined as a depletion region with a defect density N t and an energy level E t in the band gap. The second definition of surface is used in cases of dislocation [12] and grain boundary [13]. The recombination at the surface is determined by using the Shockley-Read-Hall theory.…”

Section: Surface Recombinationmentioning

confidence: 99%

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Djemel

Nouiri

Kouissa

et al. 2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

The cathodoluminescence (CL) technique is frequently used to study semiconductor materials. The quantitative determination of material parameters requires an accurate simulation of the CL signal as a function of electron beam parameters (i.e. intensity I p , energy E 0 ). The free surface of a semiconductor can be described by a defect density N t , which induces localised electron states E t in the band gap. The surface is generally charged, which induces a band bending near the surface. Hence, a potential barrier E b is formed across a space-charge region. The electric field E in this region causes the carriers to drift towards the surface and enhances their recombination. This latter is treated using the Shockley-Read-Hall theory. This paper deals with the case of n-GaAs, particularly the comparison between the numerical results of the model and experimental data obtained from the literature. A connection between the movement of the energy levels E t considered in this model and the surface recombination velocity V s is established.

show abstract

“…Extended defects limit the electronic and optical properties either by an enhanced recombination of electron-hole pairs or by the generation of leakage currents. In the case of grain boundaries [2], dislocation [3] or metallic precipitate [4], a model has been developed to determine self-consistently the barrier height E b and the recombination velocity S using the Shockley-Read-Hall theory. The present contribution deals with the dependence of the recombination parameters on the defect interaction.…”

Section: Introductionmentioning

confidence: 99%

Grain boundary recombination in semiconductors: the grain boundary interaction case

Tarento

Mekki

2015

Phys. Status Solidi C

View full text Add to dashboard Cite

The recombination velocity and the barrier height at a grain boundary are investigated with respect to the interaction between two parallel grain boundaries. A self‐consistent calculation has been performed within the Read‐Hall‐Shockley framework. The procedure takes into account of the space‐charge region and the quasi‐neutral region assuming a rigid displacement of the bands. The grain‐boundary energy states are considered in the half‐filled‐level model. The dependence of the recombination parameters are reported versus the excitation and the semiconductor and grain‐boundary characteristics. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Influence of illumination on the grain boundary recombination velocity in silicon

Cited by 49 publications

References 13 publications

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Grain boundary recombination in semiconductors: the grain boundary interaction case

Contact Info

Product

Resources

About