Grain boundary recombination in semiconductors: the grain boundary interaction case

Abstract

The recombination velocity and the barrier height at a grain boundary are investigated with respect to the interaction between two parallel grain boundaries. A self‐consistent calculation has been performed within the Read‐Hall‐Shockley framework. The procedure takes into account of the space‐charge region and the quasi‐neutral region assuming a rigid displacement of the bands. The grain‐boundary energy states are considered in the half‐filled‐level model. The dependence of the recombination parameters are reported versus the excitation and the semiconductor and grain‐boundary characteristics. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)