Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties

Abstract

In this work, γ-ray irradiation effects on pentacene thin films are investigated in terms of the change in the crystallinity, and electronic structure as well as chemical states of the film.

Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

“…where λ is the wavelength of the X-ray radiation used (0.15406 nm), β is the full width at half maximum (FWHM), and θ is the Bragg's diffraction angle of the main peak in the XRD spectra. However, the XRD peak can be widened through the defects and internal stress, so these obtained crystalline size values are comparable to the other reported values in the literature [22]- [26]. The AFM result shows the growth condition of the pentacene thin films using a scan size of 11µm 2 .…”

Effect of annealing on thin film AgInSe2 solar cell

“…thin films AIS are N type of semiconducting naturally [5]. The material modification by several external energy sources like laser irradiations [6] thermal annealing [7] γ irradiations [8] and proton irradiation [9]. brings significant changes in their structural and optical properties [10] direct gap semiconductors [11] lies between 0.8 and 2.0 eV [12] the crystal structure of AIS is tetragonal structure chalcopyrite with the lattice constant a =b= 6.102 A° and c = 11.69 A° [13].…”

The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

“…Most of the applications of this material are realized in its thin film form. The material modification by various external energy sources like laser irradiation, 20 thermal annealing, 21 γ irradiation, 22 proton irradiation, 23 etc. brings significant changes in their optical as well as structural properties.…”