Effect of annealing on thin film AgInSe2 solar cell

Sobhi, S. N.; Hussein, Bushra H.

doi:10.15251/jor.2022.184.519

Cited by 3 publications

(8 citation statements)

References 19 publications

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“…Table (2) demonstrates that with the addition of 0.2 Sulfur content and through annealing, the average grain size of the films increases. This enlargement aligns with the anticipated increase in the crystallite size of the thin films, consistent with findings by Sobhi S.N [3].…”

Section: Resultssupporting

confidence: 91%

“…Wider energy gap of AISe is favorable for photovoltaic cells, as it aligns with the desired range for efficient energy conversion. Moreover, AIS exhibits high optical absorption, approximately around 10^5 cm^(-1), which is beneficial for capturing a significant amount of incident light, further establishing its potential as a promising absorber material for photovoltaic applications [2,3]. Several techniques used to fabrication AgInSe1.8S0.2, such as thermal evaporation with the ion irradiation [4] spray pyrolysis technique [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Hussein,

Hassun,

Al-Maiyaly

et al. 2024

J. Phys.: Conf. Ser.

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Ternary Silver Indium selenide Sulfur AgInSe1.8S0.2 in pure form and with a 0.2 ratio of Sulfur were fabricated via thermal evaporation under vacuum 3*10-6 torr on glasses substrates with a thickness of (550) nm. These films were investigated to understand their structural, optical, and Hall Characteristics. X-ray diffraction analysis was employed to examine the impact of varying Sulfur ratios on the structural properties. The results revealed that the AgInSe1.8S0.2 thin films in their pure form and with a 0.2 Sulfur ratio, both at room temperature and after annealing at 500 K, exhibited a polycrystalline nature with a tetragonal structure and a predominant orientation along the (112) plane, indicating an enhanced degree of crystallinity. The Atomic Force Microscopy (AFM) was utilized to explore how Sulfur affects roughness of surfaces and sampls Grain Size. Furthermore, optical parameters, such as the optical gap and absorption coefficient, were calculated to assess the influence of Sulfur on the optical properties of the AgInSe1.8S0.2 thin films. The UV/Visible measurements indicated a reduction in the energy band gap to 1.78 eV for AgInSe1.8S0.2 at 500 K, making these films potentially suitable for photovoltaic applications. These thin films exhibited donor characteristics, with an increase in electron concentration observed with higher Sulfur content and annealing temperature.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Hussein,

Hassun,

Al-Maiyaly

et al. 2024

J. Phys.: Conf. Ser.

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“…Finally, the depletion region width was calculated. The obtained results are listed in Table (5). It is clear that the increases in Cu content led to a decrease in the carrier concentration, which in turn decrease the zero bias capacitance and increase the value of the built-in potential and the depletion region width.…”

Section: Resultsmentioning

confidence: 93%

“…The most research absorber materials are CuInGaSe2 and CdTe, two cases the majority of researchers used a n-CdS layers as a window material [1] The use of wide bandgap windows (p-type) material instead of n-type layer as products higher potential barrier for electron passage, lead to high Voc value. The employ of ZnTe as a window layers can also decrease the toxic nature by replacing CdS layer used in thin films solar cell [2,3] Electrodeposit ZnTe layer using a nonaqueous mediums of ethylene glycol (EG), in order to use these layer in thin film solar cells based on CdTe [4] In recent years, AgInSe2 has received much attraction for photovoltaic energy conversion [5] Therefore, it is essential to understand the optical losses for the decrease conversion efficiency of the AgInSe2-based solar cell [4,6]. The I-III-VI2 semiconductor materials have global energy and environmental problems.…”

Section: Introductionmentioning

confidence: 99%

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Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

Athab¹,

Hussein²

2023

Self Cite

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A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.

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Fabrication and study of characteristics of HgSr2 Can-1CunOδ+10, (n = 1, 2 and 3) thin films superconducting

Mahdi¹,

Mohammed²,

Fadhil³

et al. 2023

DJNB

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Recently, particular attention has been given to the material of Superconducting films because of its exceptional electrical and optical properties. In this work, HgSr2 Can1CunOδ+10, (n = 1, 2 and 3 ) .Thin Films Superconducting have been prepared by twostep process bulk and thin film. The optical properties were calculated absorption, transmission, reflection, band gap, coefficient of absorption, excitation coefficient and index of refraction in the range of wavelengths (300-1100) nm using a double beam spectrophotometer (UV/VIS). Structural, morphological, and electrical properties were investigated using X-ray diffraction (XRD) and AFM, Using the 4-probe technique measuring the resistivity as a function of temperature. The composite HgSr2 Ca2Cu3Oδ+10 showed an improvement in all properties the structural, electrical and optical as a result of increasing of Cu-O layers.

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Effect of annealing on thin film AgInSe2 solar cell

Cited by 3 publications

References 19 publications

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

Fabrication and study of characteristics of HgSr2 Can-1CunOδ+10, (n = 1, 2 and 3) thin films superconducting

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Effect of annealing on thin film AgInSe2 solar cell

Cited by 3 publications

References 19 publications

Effect of Sulfur on Characterization of AgInSe1.8S0.2 Thin Film and n-AgInSe1.8S0.2 / p-Si Solar Cell

Effect of Sulfur on Characterization of AgInSe1.8S0.2 Thin Film and n-AgInSe1.8S0.2 / p-Si Solar Cell

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

Fabrication and study of characteristics of HgSr2 Can-1CunOδ+10, (n = 1, 2 and 3) thin films superconducting

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Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell