The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe₂ nano-crystalline thin films for optoelectronic applications

Abstract

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

“…This result agrees with Khudayer [13] for annealing of AIS thin films. [10,15]. The E g opt has been determine by extrapolating the linear part of the plotted curve to the energy axis.…”

“…AgInSe2 alloy was synthesized of ternary compound Silver Indium Diselenide from highly purity (99.99%) Silver (Ag) Indium (In) and Diselenide (Se) elements with stoichiometric proportions (1:1:2) after that these elements were putting in evacuated quartz tube (4.5×10 -4 mbar), after that these three elements melt at temperature (1100 K) was higher than the melting temperature of AgInSe2 (1050 K) [15] in oven for six hours in the end the alloy left to cool. By the thermal evaporation method, thin films of AgInSe2 were deposited on glass substrates from powder of alloy placed in a molybdenum boat with thickness of 0.4 µm.…”

“…sol-gel spin-coating technique [6]. chemical bath deposition [8], electrodeposition process [9], reactive evaporation indicate that the incorporation [10], DC magnetron sputtering [11], pulsed electrodeposition technique [12] thermal evaporation with annealing [13], by Simple Chemical Method [14], thermal evaporation with different ion uences [15]. Bridgman technique [16] hybrid sputtering/evaporation process [17].…”

Study the Influence of Antimony Dopant and Annealing on Structural, Optical and Hall Parameters of AgInSe2 Thin Film

“…From highly purity (99.99%) of Silver (Ag) Indium (In) and Diselenide (Se) elements with stoichiometric proportions (1:1:2) to prepare: 3%Sb thin films, these elements were put in a quartz tube with a vacuum (4.5×10 -4 mbar), these three elements heated up to (1100K)was higher than the melting temperature of AgInSe2 (1050 K) [19]. In an electric furnace for six hours in the end the alloy is left to cool to room temperature.AIS: 3%Sb thin films(pure and doped at 573K) were deposited by the thermal evaporation method(6×10 -6 torr) on glass substrates with 400 nm thickness.3%Sbdoping methods were carried out by using the thermal diffusion at 473 K in an electric furnace for 60 minutes.…”

“…hot-press method [18]. thermal evaporation with different ion uences [19]. thermal evaporation with annealing [20].electrodeposition process [21].Bridgman technique [22].…”