Influence of Doping and Tunneling Interface Stoichiometry on n+In_0.5Ga_0.5As/p+GaAs_0.5Sb_0.5 Esaki Diode Behavior

Abstract

In this work, we study the influence of molecular beam epitaxy (MBE) growth parameters on the behavior of a staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diodes. We first first show that a careful doping is required to avoid any crystal defects. Then the influence of the doping concentration on the Band to Band Tunneling (BTBT) is discussed. At the end, we show that a careful monitoring of the MBE growth allows thin and abrupt n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 tunneling interfaces where BTBT behavior in this case is independent of the III-V interface stoichiometry

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

“…In the target of decreasing the tunneling length at the heterojunction, our work was extended to the staggered band gap n+In0.5Ga0.5As(Si)/p+GaAs0.5Sb0.5(Be) system where BTBT current is boosted by a factor of 60 when compared to the homojunction system [5]. The influence of doping concentration on BTBT behavior was later investigated on similar heterojunction reaching BTBT peak current density of 1.1 mA/µm 2 [6].…”

Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices

“…), the main challenge of TFETs remains in controlling the defects at the channel tunneling interface. In the target to focus on the latter challenge and avoid the problem of the high-k/semiconductor, we have proposed to use III-V Esaki diodes instead of TFETs to study the influence of band alignment, 4 doping, 5 and interface stoichiometry 6 on Band to Band Tunneling (BTBT) of III-V tunneling interfaces. These works are done on lattice-matched substrates where threading dislocations coming from the channel/substrate growth are avoided.…”