Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

Magnetic susceptibility of n-type GaAs

“…As dopants, Si, Te and S were used at a concentration N d ranging 0268-1242/12/055018+04$33.00 from 4.3 × 10 15 to 3.9 × 10 18 cm −3 . The carrier concentrations n, as determined by the van-der-Pauw/Hall method, ranged from 4.1 × 10 15 to 3.6 × 10 18 cm −3 [8]. The carrier concentration is always lower than dopant concentration due to the formation of compensating defects, e.g.…”

Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

“…Other emission bands centered near 1,050 nm and 1,300 nm (not presented in this work) have been associated with a gallium vacancy (VGa) bound to a donor [22] and a (SiGaVGaSiGa) complex [23], respectively. See [16] for a recent summary of the experimentally observed emissions, [24] for a discussion of the defects introduced by silicon and boron, and [20] for first-principles computations of their defect levels. The silicon donor ionization energy in GaAs is 2.3 meV [25].…”

“…Not shown are mid-gap electron traps that are centers for non-radiative recombination [26]. As described in [24] boron can replace gallium as an isoelectronic substitution or it can replace arsenic as an acceptor.…”