Ferroelectric domain walls hold great promise as functional 2D-materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behavior at charged walls in semiconducting ErMnO 3. We relate the transition to the formation-and eventual activation-of an inversion layer that acts as the channel for the charge transport. The findings provide new insight to the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.

Domain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly switch between insulating and conductive domain-wall states, enabling elementary electronic devices such as gates and transistors. To facilitate electrical signal processing and transformation at the domain-wall level, however, an expansion into the realm of alternating-current technology is required. Here, we demonstrate diode-like alternating-to-direct current conversion based on neutral ferroelectric domain walls in ErMnO. By combining scanning probe and dielectric spectroscopy, we show that the rectification occurs at the tip-wall contact for frequencies at which the walls are effectively pinned. Using density functional theory, we attribute the responsible transport behaviour at the neutral walls to an accumulation of oxygen defects. The practical frequency regime and magnitude of the direct current output are controlled by the bulk conductivity, establishing electrode-wall junctions as versatile atomic-scale diodes.

New developments in liquid scintillators, highefficiency, fast photon detectors, and chromatic photon sorting have opened up the possibility for building a large-scale detector that can discriminate between Cherenkov and scintillation signals. Such a detector could reconstruct particle direction and species using Cherenkov light while also having the excellent energy resolution and low threshold of a scintillator detector. Situated deep underground, and utilizing new techniques in computing and reconstruction, this detector could achieve unprecedented levels of background rejection, enabling a rich physics program spanning topics in nuclear, high-energy, and astrophysics, and across a dynamic range from hundreds of keV to many GeV. The scientific program would include observations of low-and high-energy solar neutrinos, determination of neutrino mass ordering and measurement of the neutrino CP-violating phase δ, observations of diffuse supernova neutrinos and neutrinos from a supernova burst, sensitive searches for nucleon decay and, ultimately, a search for neutrinoless double beta decay, with sensitivity reaching the normal ordering regime of neutrino mass phase space. This paper describes Theia, a detector design that incorporates these new technologies in a practical and affordable way to accomplish the science goals described above.

Diverse topological defects arise in hexagonal manganites, such as ferroelectric vortices, as well as neutral and charged domain walls. The topological defects are intriguing because their low symmetry enables unusual couplings between structural, charge, and spin degrees of freedom, holding great potential for novel types of functional 2D and 1D systems. Despite the considerable advances in analyzing the different topological defects in hexagonal manganites, the understanding of their key intrinsic properties is still rather limited and disconnected. In particular, a rapidly increasing number of structural variants is reported without clarifying their relation, leading to a zoo of seemingly unrelated topological textures. Here, we combine picometer-precise scanning-transmission-electron microscopy with Landau theory modeling to clarify the inner structure of topological defects in ErZrMnO. By performing a comprehensive parametrization of the inner atomic defect structure, we demonstrate that one primary length scale drives the morphology of both vortices and domain walls. Our findings lead to a unifying general picture of this type of structural topological defects. We further derive novel fundamental and universal properties, such as unusual bound-charge distributions and electrostatics at the ferroelectric vortex cores with emergent U(1) symmetry.

Electronic domain‐wall conductance is controlled by chemical aliovalent doping in the p‐type semiconductor Er1‐xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force micro­scopy. Emergent doping‐related variations are quantified by local transport measurements and explained based on phenomenological theories.

The spontaneous transformations associated with symmetry-breaking phase transitions generate domain structures and defects that may be topological in nature. The formation of these defects can be described according to the Kibble-Zurek mechanism, which provides a generic relation that applies from cosmological to interatomic lengthscales. Its verification is challenging, however, in particular at the cosmological scale where experiments are impractical. While it has been demonstrated for selected condensed-matter systems, major questions remain regarding e.g. its degree of universality. Here we develop a global Kibble-Zurek picture from the condensed-matter level. We show theoretically that a transition between two fluctuation regimes (Ginzburg and mean-field) can lead to an intermediate region with reversed scaling, and we verify experimentally this behavior for the structural transition in the series of multiferroic hexagonal manganites. Trends across the series allow us to identify additional intrinsic features of the defect formation beyond the original Kibble-Zurek paradigm. arXiv:1703.08321v1 [cond-mat.mtrl-sci]

We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO 3 . From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO 3 exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime ferroelectric hysteresis loops as function of frequency, temperature and applied electric fields are measured revealing the theoretically predicted saturation polarisation in the order of 5 -6 µC/cm 2 . Special emphasis is put on frequencydependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.

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