Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

Abstract

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells *Liang Ming-Ming(梁明明) a)b) , Weng Guo-En(翁国恩) a)b) , Zhang Jiang-Yong(张江勇) c) † , Cai Xiao-Mei(蔡晓梅) a)b) , Lü Xue-Qin(吕雪芹) b) , Ying Lei-Ying(应磊莹) c) , and Zhang Bao-Ping(张保平) a)c) ‡

Efficiency droop and carrier transport in AlGaN epilayers and heterostructures

“…The critical temperatures, at which the dependences change the character, differ for different samples. The temperature dependences of the PL intensity were approximated using the Arrhenius‐type function with two activation energies : Here I 0 is the PL intensity at the lowest temperatures, E a1 and E a2 are the activation energies, and c 1 and c 2 are the weight coefficients of the corresponding recombination mechanisms. The estimated activation energies in different samples were in the ranges of 5–23 meV and 40–100 meV for E a1 and E a2 , respectively.…”

“…The two thermally activated recombination mechanisms can be attributed to the carrier redistribution and delocalization . The first process, corresponding to the lower activation energy E a1 , dominates in the low temperature range.…”

Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness

“…(2) in the form t t 0 t, where t 0 is a given constant thickness for each layer in the MQW period (averaged constant value), and t is the additive part of the thickness, which can vary by arbitrary law from substrate to surface of the investigated MQW structure (depending on the structure depth). We used the exponential form of t, which is given by 12 exp( ), t K K N (10) where N is the period number (the periods are counted from the substrate to the top of the layer stack), K 1 and K 2 are parameters that specify variation of the thickness.…”

“…Investigation and development of these materials and devices requires advanced materials' characterization techniques examining structural, optical, and electronic properties. Optical characteristics of devices based on MQW structures essentially depend on structural parameters such as the thickness of barrier/quantum well layers [2,3,6,10]. Any variation in the well or barrier width with the depth or in plane during growth can therefore modify the electronic characteris-tics.…”

Barrier thickness dependence of MgxZn1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

“…34,35 The barrier layer thickness in QW affect the exciton localization and piezoelectric eld in the well, as well as the carrier transport and distribution in active layer. 36 Such issues play a crucial role in determining the structure and optical qualities of QW. Effect of different barrier layer thickness on the In x Ga 1Àx N/GaN QW opto-electronic devices were studied, including light-emitting diodes, solar cells and photodetectors.…”