Barrier thickness dependence of Mg_xZn_1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

Abstract

An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.

Theoretical Study of the Performance and Efficiency Droop of a ZnO‐Based Multiquantum Well Light‐Emitting Diode

“…As a solution, some authors have utilized p-NiO for ZnO-based photodiodes. [6][7][8] But the emerging defects at the p-NiO/n-ZnO interface cause a remarkable leakage current, which degrades the performance of p-NiO/n-ZnO light emitters. [9] One remedy is using the p-GaN layer as the top p-type layer instead of p-ZnO layer.…”