Modeling and study of MgZnO/CdZnO MQW LED with p–GaN/AlGaN cladding/EB layer

In recent years, with the development of wide-spectrum response photodetectors, InGaN as a semiconducting material has been widely studied. The nanowire array structure has excellent trapping ability, but different structures and shapes have different absorption abilities. It is necessary to optimize the nanowire array continuously in order to obtain the highest absorption efficiency possible. Based on this background, we study the effects of the geometry and structural parameters of InGaN nanowires on the optical response properties. We define the cone ratio and fill factor, respectively, and compare the optical absorption characteristics of InGaN nanowires by using the finite difference time domain (FDTD) method. The calculation results show that the truncated nanocone arrays can enhance the light capture ability and obtain the high sensitivity of the cut-off wavelength. Its optical absorption is at least 15% higher than that of nanowires. Therefore, the research of this paper can provide a certain theoretical reference for the experiment and preparation of InGaN photocathode.

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Modeling and study of MgZnO/CdZnO MQW LED with p–GaN/AlGaN cladding/EB layer

Cited by 4 publications

References 21 publications

Optoelectronic and Photonic Characteristics of Al/p-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer

Optoelectronic and Photonic Characteristics of Al/p-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer

Performance Investigation of Bottom Gate ZnO Based TFT for High-Speed Digital Display Circuit Applications

Effects of geometric parameters on optical absorption characteristics of InGaN nanostructured arrays

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