Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

“…This value coincides exactly with the result of 4H‐SiC reported by Ashrafi 23 . Because the optical bandgap of 4H‐SiC is almost the same (3.25 eV) in the literatures, 6,24–26 it is not measured in this work. According to the bandgap of 4H‐SiC, the Fermi level is near the bottom of conduction band, suggesting that unintentionally doped 4H‐SiC exhibits n‐type conduction.…”

“…The discontinuity is the basis of many modern optoelectronic devices such as high‐quality photodetectors. Popular heterojunction photodetectors associated with energy band alignments are such as Mg 2 Si/Si, 3,4 3C‐SiC/Si, 5 and β‐Ga 2 O 3 /4H‐SiC, 6 where the heterojunction structure exhibited extraordinary properties as the junction detectors can control effectively the transport of photogenerated carriers by adjusting the barrier height.…”

“…Worse still, the very low thermal conductivity of Mg 2 Si (~0.07 W·cm −1 ·K −1 ) can be considered as a disadvantage for the applications in the aspect of high light intensity. Fortunately, among the many candidate materials, silicon carbide (SiC) has a series of excellent performances, such as higher thermal conductivity (~5 W·cm −1 ·K −1 ) 6 . The excellent properties of SiC enable it to be used in plentiful applications of semiconductor devices including ultraviolet (UV) photodetectors, high‐temperature sensors, high‐power and high‐frequency metal‐oxide semiconductor field‐effect transistors (MOSFETs), and high‐voltage diodes 5 .…”

Phase junction enhanced photocatalytic activity of Ga2O3 nanorod arrays on flexible glass fiber fabric

“…16 With a wide bandgap (4.2-4.9 eV) and excellent physical and chemical properties, Ga 2 O 3 is recognized as one of the most promising semiconductors of this century. [17][18][19][20][21][22] It has extensively been applied to power devices, [23][24][25] solar-blind ultraviolet (UV) photodetectors, [26][27][28][29] gas sensors, 30 solar cells 31 and photocatalysis. 32,33 For photocatalysis applications, related studies claim that Ga 2 O 3 can theoretically exhibit better and more stable photocatalytic activity than commercial TiO 2 and realize the degradation of refractory pollutants.…”

Improvement of the Deep UV Sensor Performance of a β-Ga2O3 Photodiode by Coupling of Two Planar Diodes

“…The most common commercial UV photodiodes are Si-based, but these possess limited sensitivity at UV wavelengths [2]. Wide bandgap semiconductor materials, such as MgZnO and AlGaN, had been reported as an alternative to Si, but it remains a challenge to achieve good crystalline quality as a result of the heavy doping levels needed [3]. Gallium oxide (Ga2O3) stands out as an alternative material to UV photodiodes and has been the subject of intense recent research [4].…”