Influence of annealing on characteristics of tin disulfide thin films by vacuum thermal evaporation

Shi, Chengwu; Zhu, Chen; Shi, Guoxi; Sun, Rong; Zhan, Xiaoping; Shen, Xinyu

doi:10.1016/j.tsf.2012.03.050

Cited by 67 publications

(24 citation statements)

References 16 publications

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“…E g was obtained by extrapolating these regions of the plotted curves back (ahm) 2 = 0 and was found to vary from 1.27 to 1.43 eV given in Table 4, which is well suited to an absorber layer in TFPV devices. These values of band gap energy concluded the absence of SnS 2 phase which has band gap energy of 2.35 eV [29], which confirms the XRD and Raman studies in previous sections. Edges at lower energies were ignored due to lower absorption coefficient values.…”

Section: Optical Characterizationsupporting

confidence: 88%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Section: Optical Characterizationsupporting

confidence: 88%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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“…These results are in good correlation with the data given in [14,19,23] for films obtained by spray pyrolysis and dip coating. However, our thin films are more stoichiometric than SnS 2 layers deposited by thermal vacuum evaporation in [13]. It should be noted that scanning of the film surface by EDS reveals their uniform chemical composition.…”

Section: Resultsmentioning

confidence: 73%

“…These properties make it promising for use in thin film solar cells. In particular, SnS 2 is considered to be an alternative material to a conventional CdS window layer [8,13]. The advantages of SnS 2 are that it is non-toxic and its constituent elements (Sn and S) are cheap and Earthabundant.…”

Section: Introductionmentioning

confidence: 99%

“…The advantages of SnS 2 are that it is non-toxic and its constituent elements (Sn and S) are cheap and Earthabundant. Tin disulfide thin films can be obtained using the following methods: ionic layer adsorption and reaction (SILAR) [18], spray pyrolysis [14,19e21], thermal vacuum evaporation [13,22], plasma-enhanced chemical vapour deposition (PECVD) [15], and dip coating [23]. Each of the methods of obtaining SnS 2 thin films has its advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

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Structural and electrical properties of SnS2 thin films

Voznyi

Kosyak

Opanasyuk

et al. 2016

Materials Chemistry and Physics

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“…These properties support the use of this material as a window layer in thin film solar cells [9]. Ozin and co-workers [10] reported that excellent gas sensors can be fabricated for sensing NH 3 , H 2 S, or alcohols with nanoporous SnS 2 .…”

Section: Introductionmentioning

confidence: 64%

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

Anitha¹,

Anitha²,

Mohamed³

et al. 2018

Journal of Asian Ceramic Societies

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Tin disulfide thin films were prepared with different molarities of tin species (M Sn ) at the optimized substrate temperature using the Nebulized Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin IV chloride Penta hydrate precursor is varied from 0.05:0.4 to 0.25:0.4 (SnCl 4 .5H 2 O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS 2 thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS 2 thin films with (001) crystallite orientation. On increasing the concentration, the multi-phases (SnS and Sn 2 S 3 ) were found to be present along with SnS 2 material. The platelet-like grains were observed from SEM analysis in these SnS 2 films. Multiple interference effects were predominant in all these thin films in the wavelength region of 600-1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.2 eV to 2.75 eV with an increase in M Sn from 0.05 to 0.2 M, respectively, and further increased to 3.0 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of n-type. A minimum resistivity value of 2.19 × 10 3 Ω cm was obtained for the film grown at M Sn = 0.2 M.ARTICLE HISTORY

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Influence of annealing on characteristics of tin disulfide thin films by vacuum thermal evaporation

Cited by 67 publications

References 16 publications

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Structural and electrical properties of SnS2 thin films

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

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