Induced damage by high energy heavy ion irradiation at the GANIL accelerator in semiconductor materials

Effect of ion irradiation on current–voltage characteristics of Au/n-GaN Schottky diodes

“…Now at the MS interface the S n value is 0.10 keV nm −1 while S e is 20.4 keV nm −1 (in the GaN substrate). It is well established that S n causes creation of defects such as vacancies and interstitials at the interfaces [12] which leads to an increase in the interface state density D s . SHI irradiation results in the introduction of interface states at MS interface which influence the SBH [14][15].…”

“…1 shows the forward I-V characteristics of the Au/n-GaN Schottky diode for the pristine as well as irradiated samples with the varying fluences from 5 × 10 9 ions cm −2 to 5 × 10 11 ions cm −2 . The experimental data are fitted with the thermionic emission equation, which is given by [12] …”

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

“…Track registration is common but not systematic in iono-covalent insulators [14][15][16]. In crystalline semiconductors, ion tracks have been observed by TEM in InSb, InP, GeS, InAs, GaSb, SiGe, and Ge [17][18][19][20][21][22][23] irradiated with SHI, whereas no track was found in GaAs [21] or Si [24,25]. Moreover, at least in InP and GaAs, ion tracks are also formed below S th e if the materials have been previously damaged [26].…”

Shape transformation of Sn nanocrystals induced by swift heavy-ion irradiation and the necessity of a molten ion track

“…SHII with single ions is thus an inefficient means of forming ion tracks in c-Si. 26,27 In contrast, a much greater rate of electronic energy loss ͑Ͼ25 keV/ nm͒ can be attained with C 60 cluster ion irradiation 25,28 which overcomes the weak electron-phonon coupling in c-Si and ion track formation can be achieved.…”