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Fractal characterization of surface morphology can be useful as a tool for tailoring the wetting properties of solid surfaces. In this work, rippled surfaces of Si (100) are grown using 200 keV Ar+ ion beam irradiation at different ion doses. Relationship between fractal and wetting properties of these surfaces are explored. The height-height correlation function extracted from atomic force microscopic images, demonstrates an increase in roughness exponent with an increase in ion doses. A steep variation in contact angle values is found for low fractal dimensions. Roughness exponent and fractal dimensions are found correlated with the static water contact angle measurement. It is observed that after a crossover of the roughness exponent, the surface morphology has a rippled structure. Larger values of interface width indicate the larger ripples on the surface. The contact angle of water drops on such surfaces is observed to be lowest. Autocorrelation function is used for the measurement of ripple wavelength.

Thermally deposited 200 nm polycrystalline films of lithium fluoride (LiF) grown on glass substrates were irradiated with 150 MeV Ag ions at various fluences between 1 × 1011 and 2 × 1013 ions cm−2. The irradiation induced structural and optical modifications were studied using glancing angle x-ray diffraction (GAXRD), optical absorption and photoluminescence (PL) spectroscopy. The GAXRD results show that the films are polycrystalline and the average grain size (estimated from the widths of the GAXRD peak using the Scherrer formula) decreases systematically from 46.3 nm for the pristine sample to 18.3 nm for the sample irradiated at a fluence of 3 × 1012 ions cm−2. Thereafter, it remains constant. This reduction is attributed to strain induced fragmentation of grains. The optical absorption studies show dominant absorption bands of F3 (385 nm) and F2 (445 nm) colour centres. It is observed that the concentration of the colour centres increases with ion fluence and gets saturated at higher fluences. This can be correlated with GAXRD results in the sense that as the density of grain boundaries increases the concentration of colour centres also increases. The variation with fluence in PL intensities of the F2 and colour centres is studied. The intensity of both bands (F2 and ) increases up to a fluence of 1 × 1012 ions cm−2, followed by an exponential decrease, which is due to the increase in the non-radiative transition rate in the presence of defect-rich material.

Studies on interaction of graphene with radiation are important because of nanolithographic processes in graphene-based electronic devices and for space applications. Since the electronic properties of graphene are highly sensitive to the defects and number of layers in graphene sample, it is desirable to develop tools to engineer these two parameters. We report swift heavy ion (SHI) irradiation-induced annealing and purification effects in graphene films, similar to that observed in our studies on fullerenes and carbon nanotubes (CNTs). Raman studies after irradiation with 100-MeV Ag ions (fluences from 3 × 1010 to 1 × 1014 ions/cm2) show that the disorder parameter α, defined by ID/IG ratio, decreases at lower fluences but increases at higher fluences beyond 1 × 1012 ions/cm2. This indicates that SHI induces annealing effects at lower fluences. We also observe that the number of graphene layers is reduced at fluences higher than 1 × 1013 ions/cm2. Using inelastic thermal spike model calculations, we estimate a radius of 2.6 nm for ion track core surrounded by a halo extending up to 11.6 nm. The transient temperature above the melting point in the track core results in damage, whereas lower temperature in the track halo is responsible for annealing. The results suggest that SHI irradiation fluence may be used as one of the tools for defect annealing and manipulation of the number of graphene layers.PACS60.80.x; 81.05.ue

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