Shape transformation of Sn nanocrystals induced by swift heavy-ion irradiation and the necessity of a molten ion track

Giulian, Raquel; Kremer, Felipe; Araujo, Leandro; Sprouster, David; Kluth, Patrick; Fichtner, P.F.P.; Byrne, Aidan; Ridgway, Mark C

doi:10.1103/physrevb.82.113410

Cited by 25 publications

(9 citation statements)

References 28 publications

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“…More recent results on the SHII of Sn NPs localized at the interface between a-SiO 2 and c-Si layers clearly demonstrated NP elongation only takes place towards the a-SiO 2 layer, where ion tracks are formed. 20 On the other hand, freestanding ZnS (semiconductor) microstructures were shown to deform under irradiation with 4 MeV Xe ions, elongating perpendicularly to the incident beam (as also verified for silica colloids). This result implies that amorphous NPs, unlike metallic NPs, may elongate under SHII without the presence of an embedding matrix.…”

Section: Introductionmentioning

confidence: 71%

Structural properties of embedded Ge nanoparticles modified by swift heavy-ion irradiation

et al. 2012

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Silica-embedded Ge nanoparticles (NPs) of different sizes irradiated with swift heavy ions (SHIs) at a given energy may reportedly elongate along the incident ion direction, perpendicular to it, or not at all. Here, for a given NP size distribution, we have investigated the SHI energy dependence of the elongation process. Higher-energy irradiation generally yielded elongation along the ion track (as previously observed), but for lower-energy irradiation, elongation both parallel and perpendicular to the ion direction was observed. We demonstrate that NP size and electronic energy loss together govern the elongation process, reinforcing the proposed model where elongation perpendicular to the ion direction is only expected for Ge NPs bigger than the mean ion track diameter in silica. Here, a wide fluence range is also probed, enabling us to follow in more detail the transition from spherical unirradiated Ge NPs to Ge NPs elongated either parallel or perpendicular to the ion beam. X-ray absorption spectroscopy (XAS) measurements are utilized for the quantification of crystalline, amorphous, and oxidized environments around Ge atoms. Combining such results with transmission electron microscopy (TEM) observations shows the Ge NPs are rendered amorphous prior to elongation, potentially via a melt-and-quench process. Thereafter, stronger electron-phonon coupling in amorphous Ge compared to crystalline Ge may potentially influence the elongation process. The Ge NP amorphization occurs at lower fluences for higher irradiation energies, indicating electronic energy loss-and not ballistic effects-governs the amorphization. Subsequent to amorphization and elongation, TEM and XAS results also show the NPs gradually intermix with SiO 2 and dissolve within the matrix as the irradiation fluence increases. We discuss the impact of such results in the ion beam tailoring of Ge NPs for technological applications.

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Section: Introductionmentioning

confidence: 71%

Structural properties of embedded Ge nanoparticles modified by swift heavy-ion irradiation

et al. 2012

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“…Accordingly, samples with Sn nanoparticles have been formed via vacuum annealing after ion implantation [28]. In the present study, no annealing has been performed, so the possibility of oxide aggregates is somewhat reduced.…”

Section: Discussionmentioning

confidence: 99%

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Green¹,

Hunt²,

Zatsepin³

et al. 2012

Journal of Non-Crystalline Solids

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The electronic structures of Sn and Pb implanted SiO 2 are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb\O and Sn\O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong Sn\O interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO 2 requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO 2 . These results help explain the complex processes which take place upon implantation and determine the final products.

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“…Integrally, these effects result in general ordering of nanocrystals along ion tracks. The same processes proceed in the case of metal inclusions embedded in an insulator matrix and, as it was shown recently (Mishra et al, 2007;Giulian et al, 2010;Dawi et al, 2011;Kumar et al, 2011), irradiation with sufficiently high ion fluences and energies provides a means for forming long wire-shaped nanoparticles in ion tracks. Table 3.…”

Section: Interaction Of High-energy Ions With Silicon Nanocrystals Inmentioning

confidence: 92%

Si Nanocrystal Arrays Created in SiO2 Matrix by High-Energy Ion Bombardment

Antonova¹

2012

Ion Implantation

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Shape transformation of Sn nanocrystals induced by swift heavy-ion irradiation and the necessity of a molten ion track

Cited by 25 publications

References 28 publications

Structural properties of embedded Ge nanoparticles modified by swift heavy-ion irradiation

Structural properties of embedded Ge nanoparticles modified by swift heavy-ion irradiation

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Si Nanocrystal Arrays Created in SiO2 Matrix by High-Energy Ion Bombardment

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