Ion Implantation 2012
DOI: 10.5772/33690
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Si Nanocrystal Arrays Created in SiO2 Matrix by High-Energy Ion Bombardment

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“…In more detail, the trap recharging in the multibarrier system is considered in ref. 45. So, a decrease in the measurement frequency leads to a recharging of a higher number of traps and, thus, the magnitude of the peaks at the C-V characteristics is increased.…”
Section: Electric Properties Of the Grown V 2 O 5 Layersmentioning
confidence: 99%
“…In more detail, the trap recharging in the multibarrier system is considered in ref. 45. So, a decrease in the measurement frequency leads to a recharging of a higher number of traps and, thus, the magnitude of the peaks at the C-V characteristics is increased.…”
Section: Electric Properties Of the Grown V 2 O 5 Layersmentioning
confidence: 99%