Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

Abstract

The atomic scale characterization of dopant atoms in semiconductor devices to establish correlations with the electrical activation of these atoms is essential to the advancement of contemporary semiconductor process technology. Spectro-photoelectron holography combined with first-principles simulations can determine the local three-dimensional atomic structures of dopant elements, which in turn affect their electronic states. In the work reported herein, this technique was used to examine arsenic (As) atoms doped into a silicon (Si) crystal. As 3d core level photoelectron spectroscopy demonstrated the presence of three types of As atoms at a total concentration of approximately 10 cm, denoted as BEH, BEM, and BEL. On the basis of Hall effect measurements, the BEH atoms corresponded to electrically active As occupying substitutional sites and exhibiting larger thermal fluctuations than the Si atoms, while the BEM atoms corresponded to electrically inactive As embedded in the AsV (n = 2-4) type clusters. Finally, the BEL atoms were assigned to electrically inactive As in locally disordered structures.

Soft X-ray ARPES for three-dimensional crystals in the micrometre region

“…Thus, we usually perform the DA30 angular mapping at different 2 and ' angles and then combine the maps analytically into a photoelectron hologram of a large solid angle (Matsushita et al, 2020). Some photoelectron holograms obtained by this method have already been reported (Tsutsui et al, 2017;Yokoya et al, 2019). In these reports, by taking advantage of the high photoemission intensity, photoelectron holograms of dopants in semiconductors were successfully observed for each chemically shifted core-level photoemission peak resolved by the high-energy-resolution DA30 analyzer.…”

Theory for High‐Angular‐Resolution Photoelectron Holograms Considering the Inelastic Mean Free Path and the Formation Mechanism of Quasi‐Kikuchi Band

“…Recently, using photoelectron holography, [ 1 ] the local atomic arrangements around the dopants have been revealed. [ 2–6 ] Figure 1 shows the measurement principle of photoelectron holography. Photoelectron holography is an advanced form of core‐level photoemission.…”

Photoelectron diffraction for probing valency and magnetism of 4f -based materials: A view on valence-fluctuating EuIr2Si2

“…Photoelectron diffraction (PED) is well established as an efficient method for detailed structural analysis of crystalline surfaces, defects and impurities, thin films, adsorbates, twodimensional (2D) materials, and other systems [1][2][3][4][5][6][7]. It is based on the fact that photoelectrons emitted from the atomic sites, called emitters, experience multiple scattering on the surrounding atoms when they propagate to the sample surface.…”