Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

Liu, An-Chen; Singh, Konthoujam James; Huang, Yu-Ming; Ahmed, Tanveer; Liou, Fang-Jyun; Liou, Yu-Hau; Ting, Chien‐Kun; Lin, Chien-Chung; Li, Yiming; Samukawa, Seiji; Kuo, Hao‐Chung

doi:10.1109/mnano.2021.3066393

Cited by 14 publications

(10 citation statements)

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“…Sidewall passivation is essential to maintain the dependability required for high performance with further reduction in the size of the device. In general, ALD is a key technique for performing sidewall passivation to prevent a drop in the efficiency of μ-LEDs, as their characteristic size is reduced to the microscale owing to the leakage current [ 69 ].…”

Section: Ald Technologies For Micro-ledsmentioning

confidence: 99%

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

et al. 2021

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In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

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Section: Ald Technologies For Micro-ledsmentioning

confidence: 99%

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

et al. 2021

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“…Moreover, the passivation technique of atomic layer deposition (ALD) provides excellent step coverage passivation and uniformity. The ALD technique plays an important role in micrometer scale LEDs, in which it can suppress the leakage current caused by sidewall defects as well as decrease the Shockley-Read Hall (SRH) non-radiative recombination [21][22][23][24]. On the other hand, due to better dielectric quality, the ALD technique also can be used on the passivation of quantum dots, which can prevent moisture and oxidation.…”

Section: Introductionmentioning

confidence: 99%

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

et al. 2021

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Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.

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“…On the other hand, more intense spontaneous emission shifts toward the center of the MQWs at higher current densities ( Figure 8 b) due to more uniform current spreading ( Figure 7 b). In addition, the intensity of the spontaneous emission drops near the MQW mesa edges, which could be ascribed to current leakage and non-radiative surface recombination on mesa sidewall surfaces [ 30 ]. In particular, such a phenomenon is relatively more significant at low current densities [ 3 ].…”

Section: Resultsmentioning

confidence: 99%

Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes

et al. 2022

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Micro-light-emitting diodes (micro-LEDs) have been regarded as the important next-generation display technology, and a comprehensive and reliable modeling method for the design and optimization of characteristics of the micro-LED is of great use. In this work, by integrating the electrical simulation with the optical simulation, we conduct comprehensive simulation studies on electrical and optical/emission properties of real InGaN-based flip-chip micro-LED devices. The integrated simulation adopting the output of the electrical simulation (e.g., the non-uniform spontaneous emission distribution) as the input of the optical simulation (e.g., the emission source distribution) can provide more comprehensive and detailed characteristics and mechanisms of the micro-LED operation than the simulation by simply assuming a simple uniform emission source distribution. The simulated electrical and emission properties of the micro-LED were well corroborated by the measured properties, validating the effectiveness of the simulation. The reliable and practical modeling/simulation methodology reported here shall be useful to thoroughly investigate the physical mechanisms and operation of micro-LED devices.

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Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

Cited by 14 publications

References 50 publications

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes

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