Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes

Abstract

Micro-light-emitting diodes (micro-LEDs) have been regarded as the important next-generation display technology, and a comprehensive and reliable modeling method for the design and optimization of characteristics of the micro-LED is of great use. In this work, by integrating the electrical simulation with the optical simulation, we conduct comprehensive simulation studies on electrical and optical/emission properties of real InGaN-based flip-chip micro-LED devices. The integrated simulation adopting the output of the electrical simulation (e.g., the non-uniform spontaneous emission distribution) as the input of the optical simulation (e.g., the emission source distribution) can provide more comprehensive and detailed characteristics and mechanisms of the micro-LED operation than the simulation by simply assuming a simple uniform emission source distribution. The simulated electrical and emission properties of the micro-LED were well corroborated by the measured properties, validating the effectiveness of the simulation. The reliable and practical modeling/simulation methodology reported here shall be useful to thoroughly investigate the physical mechanisms and operation of micro-LED devices.

A 3D simulation model to study all-inorganic CsPbX3 (X = Br and I) perovskites-based light-emitting diodes with different hole-transporting layers

“…For PEDOT: PSS HTL-based CsPbI 3 LED, due to non-radiative recombination processes, a drop in the total emission rate is observed with increasing the current [57]. Wu et al reported the drop in the total emission rate in the range of lower currents is associated with SRH recombination, while in the range of higher currents, it is due to Auger recombination [58]. Moreover, as shown in figure 7(a), the CsPbBr 3 LED based on PEDOT: PSS shows the highest total emission rate when compared to the CsPbBr 3 LEDs based on CuSCN and MoO 3 HTLs.…”

Investigation into the Effects of Cross-Sectional Shape and Size on the Light-Extraction Efficiency of GaN-Based Blue Nanorod Light-Emitting Diode Structures

“…However, in recent years, microand nano-sized GaN LEDs have gained increasing interest, driven by nano-scale fabrication techniques and large-scale integration technologies. These miniaturized LEDs are expected to provide high efficiency and superior functionality in emerging microdisplay, biology, sensing, and visible light communication applications [7][8][9][10][11][12][13][14]. Micro-LEDs are considered to be ideal candidates for next-generation displays such as virtual reality (VR) and augmented reality (AR) smart glasses [15][16][17][18].…”