Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias

Abstract

It has become clear that the self-consistent Ornstein-Zernike approximation (SCOZA) is a microscopic liquid-state theory that is able to predict the location of the critical point and of the liquid-vapour coexistence line of a simple fluid with high accuracy. However, applications of the SCOZA to continuum systems have been restricted up to now to liquids where the interatomic potentials consist of a hard-core part with an attractive two-Yukawa-tail part. We present here a reformulation of the SCOZA that is based on the Wertheim-Baxter formalism for solving the mean-spherical approximation for a hard-core-multi-Yukawa-tail fluid. This SCOZA version offers more flexibility and opens access to systems where the interactions can be represented by a suitable linear combination of Yukawa tails. We demonstrate the power of this generalized SCOZA for a model system of fullerenes; furthermore, we study the critical behaviour of a system with an explicitly density-dependent interaction where the phenomenon of double criticality is observed. Finally, we extend our SCOZA version to the case of a binary symmetric mixture and present and discuss results for phase diagrams.

Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region

“…The extent of conduction band bending in the original device as indicated by the Monte Carlo simulation was the same as that reported in ref. 8. In that study, the calculated g o for this device with an L c of 100 nm and an L g of 45 nm was 1.6 S/mm, which was approximately three times that of a device with an L c of 100 nm and an L g of 65 nm.…”

“…[1][2][3][4][5] Ballistic transportation is especially suitable for achieving the high-speed operation of transistors. [6][7][8][9][10][11] Therefore, a vertical InGaAs channel metal-insulator-semiconductor field-effect transistor (MISFET) with an InP/InGaAs heterostructure launcher and an undoped channel was proposed. [6][7][8][9][10][12][13][14][15] To realize high-speed operation of the proposed device, the device was fabricated as shown in Fig.…”

Fabrication of Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7 MA/cm2

“…1,2) However, these transistors can increase the speed of an electron on the basis of its ballistic nature. [3][4][5] Therefore, we proposed a vertical InGaAs channel metal-insulator-semiconductor field effect transistor (MISFET) with an InP/InGaAs heterostructure launcher and an intrinsic channel. [6][7][8][9][10] To realize a short charging time as well as a short transit time, a narrow channel with high current density is required.…”

Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain

“…To realize a device with ballistic transportation, we have previously proposed a device with a heterostructure launcher and an undoped transport region. [1][2][3][4] In the proposed device, hot electrons that are extracted from the emitter by the application of an appropriate gate bias travel only in the intrinsic region, and therefore, ballistic transportation is expected. From a Monte Carlo simulation, the estimated speed of hot electrons in a 70-nm-long transport region has been observed to be greater than 7:5 Â 10 7 cm/s.…”