InAsSbP quantum dots grown by liquid phase epitaxy

Krier, A.; Lábadi, Z.; Hammiche, A.

doi:10.1088/0022-3727/32/20/301

Cited by 25 publications

(15 citation statements)

References 23 publications

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“…InAsSbP quaternary alloy was successfully used for nucleation of quantum dots (QDs). In the first experiment to grow nanostructures with this quaternary composition, GaAs was used as a substrate (Krier, 1999). In that work the grown structure was characterized by photoluminescence (PL) measurements at 4 K temperature and the PL peak at 1.65 µm was observed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of InAsSbP quantum dot mid-infrared sensors

Harutyunyan

Gambaryan

Aroutiounian

et al. 2015

J. Sens. Sens. Syst.

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Abstract. This work presents the results of investigations of a low bias mid-infrared(IR) photoconductive cell (PCC) with InAsSbP quantum dots (QDs). The self-assembled nanostructures were grown on an InAs(100) substrate by modified liquid phase epitaxy. The coarsening of the QDs due to Ostwald ripening was discussed. Hysteresis with a remnant capacitance of 0.483 pF and contra-directional oscillations on the PCC's capacitancevoltage characteristic at 78 K were observed. Additionally, peaks at 3.48, 3.68 and 3.89 µm on the room temperature photoresponse spectrum of a quantum dot photoconductive cell were detected. Room temperature photosensing properties were investigated under an irradiation of 3.39 µm as well. At a power density of 0.07 W cm −2 , the surface resistance of quantum dot PCC was reduced by up to 7 %. A current responsivity of 0.2 mA W −1 was measured at an applied voltage of 8 mV.

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Section: Introductionmentioning

confidence: 99%

Investigation of InAsSbP quantum dot mid-infrared sensors

Harutyunyan

Gambaryan

Aroutiounian

et al. 2015

J. Sens. Sens. Syst.

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“…These and other QD-based devices are expected to perform well at elevated temperatures due to their three-dimensional carrier confinement characteristics. [3][4][5] In these low dimensional structures, the movement of charge carriers is constrained by potential barriers. QDIPs are inherently sensitive to normal incidence radiation and also the dark current is much lower than that of QWIPs.…”

Section: Introductionmentioning

confidence: 99%

“…This fact together with a potentially lattice-matched growth on an InAs substrate makes InAsSbP unique in this material class. While InAsSbP quantum dots have been successfully grown previously, 3,7,8 only a few studies on quaternary cooperative QDs/leaves structures, so-called nano-camomiles, have been reported so far. 4,5 In particular, while charge carrier localization is expected in the central InAsSb-QD rather than in the surrounding InAsPleaves in these nano-camomiles, due to the conduction and valence band offsets of the dot, leaves and surrounding matrix material, long-ranged strain, and polarization potentials arising from the leaves are expected to induce a significant influence on the properties of the electrons and holes in the central dot.…”

Section: Introductionmentioning

confidence: 99%

Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

Marquardt

Hickel

Neugebauer

et al. 2011

Journal of Applied Physics

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Quaternary III-V InAsSbP quantum dots (QDs) have been grown in the form of cooperative InAsSb/InAsP structures using a modified version of the liquid phase epitaxy. High resolution scanning electron microscopy, atomic force microscopy, and Fourier-transform infrared spectrometry were used to investigate these so-called nano-camomiles, mainly consisting of a central InAsSb QD surrounded by six InAsP-QDs, that shall be referred to as leaves in the following. The observed QDs average density ranges from 0.8 to 2 x 10(9) cm(-2), with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the leaves is equal to (6-10) x 10(9) cm(-2) with dimensions of approx. 5 to 40 nm in width and depth. To achieve a first basic understanding of the electronic properties, we have modeled these novel nanostructures using second-order continuum elasticity theory and an eight-band k . p model to calculate the electronic structure. Our calculations found a clear localization of hole states in the central InAsSb dot. The localization of electron states, however, was found to be weak and might thus be easily influenced by external electric fields or strain. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624621

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“…This could be used as mixed compounds such as InAsSbP, a promising candidate because it can cover the 3-5 lm mid-infrared regions adjusting its alloy composition with three V elements only. It makes InAsSbP unique in this class and has been successfully grown on InAs substrates [17][18][19][20][21][22]. Actually, InAsSbP quantum dots have been successfully grown, while in contrast, only a few studies on quaternary QDs/nanopits nucleation have been reported so far [19,20].…”

Section: Introductionmentioning

confidence: 99%