Efficient infrared light emitters integrated on the mature Si technology platform could lead to on-chip optical interconnects as deemed necessary for future generations of ultrafast processors as well as to nanoanalytical functionality. Toward this goal, we demonstrate the use of GaAs-based nanowires as building blocks for the emission of light with micrometer wavelength that are monolithically integrated on Si substrates. Free-standing (In,Ga)As/GaAs coaxial multishell nanowires were grown catalyst-free on Si(111) by molecular beam epitaxy. The emission properties of single radial quantum wells were studied by cathodoluminescence spectroscopy and correlated with the growth kinetics. Controlling the surface diffusivity of In adatoms along the NW side-walls, we improved the spatial homogeneity of the chemical composition along the nanowire axis and thus obtained a narrow emission spectrum. Finally, we fabricated a light-emitting diode consisting of approximately 10(5) nanowires contacted in parallel through the Si substrate. Room-temperature electroluminescence at 985 nm was demonstrated, proving the great potential of this technology.

We investigate the impact of shell growth on the carrier dynamics and exciton-phonon coupling in CdSe-CdS core-shell nanoplatelets with varying shell thickness. We observe that the recombination dynamics can be prolonged by more than one order of magnitude, and analyze the results in a global rate model as well as with simulations including strain and excitonic effects. We reveal that type I band alignment in the hetero platelets is maintained at least up to three monolayers of CdS, resulting in approximately constant radiative rates. Hence, observed changes of decay dynamics are not the result of an increasingly different electron and hole exciton wave function delocalization as often assumed, but an increasingly better passivation of nonradiative surface defects by the shell. Based on a global analysis of time-resolved and time-integrated data, we recover and model the temperature dependent quantum yield of these nanostructures and show that CdS shell growth leads to a strong enhancement of the photoluminescence quantum yield. Our results explain, for example, the very high lasing gain observed in CdSe-CdS nanoplatelets due to the type I band alignment that also makes them interesting as solar energy concentrators. Further, we reveal that the exciton-LO-phonon coupling is strongly tunable by the CdS shell thickness, enabling emission line width and coherence length control.

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In this work we present a comparison of multiband k · p models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled quantum dot with a zincblende structure. For the system under consideration, we find a very good agreement between the results of the microscopic models and the 8-band k · p formalism, in contrast to a 6+2-band k·p-model, where conduction band and valence band are assumed to be decoupled. This indicates a surprisingly strong coupling between conduction and valence band states for the wide band gap materials GaN and AlN. Special attention is paid to the possible influence of the weak spin-orbit coupling on the localized single-particle wave functions of the investigated structure.

Using continuum elasticity theory and an eight-band k·p formalism, we study the electronic properties of GaN nanowires with axial InxGa1-xN insertions. The three-dimensional strain distribution in these insertions and the resulting distribution of the polarization fields are fully taken into account. In addition, we consider the presence of a surface potential originating from Fermi level pinning at the sidewall surfaces of the nanowires. Our simulations reveal an in-plane spatial separation of electrons and holes in the case of weak piezoelectric potentials, which correspond to an In content and layer thickness required for emission in the blue and violet spectral range. These results explain the quenching of the photoluminescence intensity experimentally observed for short emission wavelengths. We devise and discuss strategies to overcome this problem.

We study the optical properties of coaxial GaAs/InxGa1−xAs core/multishell nanowires with x between 0.2 and 0.4 at 10 K. The evolution of the photoluminescence energy of the InxGa1−xAs quantum well shell with x and shell thickness agrees with the result of 8-band k·p calculations, demonstrating that the shell growth is pseudomorphic. At low excitation power, the photoluminescence from the shell is dominated by the recombination of exciton states deeply localized within the shell. We show that these states are associated with crystal-phase quantum rings that form at polytype segments of the InxGa1−xAs quantum well shell.

We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k · p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zincblende/wurtzite nanostructures. The energy difference between the two bands depends sensitively on strain, such that even small strains can reverse the energy ordering of the two bands. This reversal may already be induced by the non-negligible lattice mismatch between the two crystal phases in polytype GaAs nanostructures, a fact that was ignored in previous studies of these structures. We present a systematic study of the influence of intrinsic and extrinsic strain on the electron ground state for both purely zincblende and wurtzite nanowires as well as for polytype superlattices. The coexistence of the two conduction bands and their opposite strain dependence results in complex electronic and optical properties of GaAs polytype nanostructures. In particular, both the energy and the polarization of the lowest intersubband transition depends on the relative fraction of the two crystal phases in the nanowire. arXiv:1704.08499v1 [cond-mat.mes-hall]

arXiv:1903.07372v4 [cond-mat.mes-hall]