Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates

Abstract

Efficient infrared light emitters integrated on the mature Si technology platform could lead to on-chip optical interconnects as deemed necessary for future generations of ultrafast processors as well as to nanoanalytical functionality. Toward this goal, we demonstrate the use of GaAs-based nanowires as building blocks for the emission of light with micrometer wavelength that are monolithically integrated on Si substrates. Free-standing (In,Ga)As/GaAs coaxial multishell nanowires were grown catalyst-free on Si(111) by molecular beam epitaxy. The emission properties of single radial quantum wells were studied by cathodoluminescence spectroscopy and correlated with the growth kinetics. Controlling the surface diffusivity of In adatoms along the NW side-walls, we improved the spatial homogeneity of the chemical composition along the nanowire axis and thus obtained a narrow emission spectrum. Finally, we fabricated a light-emitting diode consisting of approximately 10(5) nanowires contacted in parallel through the Si substrate. Room-temperature electroluminescence at 985 nm was demonstrated, proving the great potential of this technology.

Growth of wurtzite GaP in InP/GaP core–shell nanowires by selective-area MOVPE

“…Semiconductor nanowires (NWs) have attracted considerable interest in recent years because of their potential applications in devices such as field-effect transistors [1,2], light-emitting diodes [3][4][5][6], and solar cells [7,8]. The most-surprising feature of nanowires is that they can be grown with a wurtzite (WZ) crystal structure by appropriately adjusting the growth conditions such as growth temperature, V/III ratio, and doping amount [9][10][11][12][13][14][15][16], even though they are stable in the zinc blende (ZB) phase of the bulk crystal.…”

InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

“…2 (a)) is not due to contributions from different areas of the nanowire that emit at different wavelengths, as it would have been if the QW thickness or composition varied along the nanowire. 11,19 Instead, it suggests that it stems from a cause that is spatially shorter in range and common along the length of the nanowire. The rough inverted InGaAs-InP interface seen in Fig.…”

“…Although nanowire heterostructures combining various materials have been extensively reported, [9][10][11][12][13][14][15][16][17][18][19][20] reports on the use of InP-InGaAs material combination in nanowires have been surprisingly rare. 12, [21][22][23][24][25] In fact, InP-InGaAs nanowire QWs have not been reported despite popularity of their planar counterpart.…”

Направленное излучение нитевидных нанокристаллов GaAs/AlGaAs, легированных бериллием

“…Для оптоэлектронных приложений структуры типа ННК GaAs в оболочке AlGaAs имеют значительный потенциал в связи с наличием широ-козонного покрывающего слоя, эффективно подавляющего процессы безызлучательной рекомбинации, связанные с высокой плотностью поверхностных состояний в ННК GaAs [2][3][4]. Кроме того, подобная геометрия ННК открывает новые возможности инженерии электрон-ной структуры в радиальных гетероструктурах [5,6]. Исследование интенсивности направленного излучения как массивов вертикально стоящих, так и одиночных ННК имеет принципиальное значение для улучшения эффективности оптоэлектронных приборов.…”