“…Recently, InAsSbP QDs were successfully grown on InAs substrates as well (Gambaryan, 2010, andGambaryan et al, 2012). It was shown that using InAs substrates leads to the sensitivity in the mid-IR range (Gambaryan et al, 2011, and. Among quantum-size object fabrication techniques, the self-organized Stranski-Krastanow (S-K) growth mode is an important one by which dislocationfree nanostructures can be produced (Stranski and Krastanov, Published by Copernicus Publications on behalf of the AMA Association for Sensor Technology.…”