The initial phases of the ALD growth of ZnO have been
examined.
It is shown that ZnO exhibits an island-like growth on Si, layer-by-layer
on GaN, whereas on sapphire, the growth mode can be tuned by the deposition
temperature. A new method for depositing ultrathin smooth polycrystalline
films is presented. The growth rates on different substrates and at
different deposition temperatures were analyzed, and the possibility
of epitaxial growth was also examined.
We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.
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