InAs epitaxial lateral overgrowth of W masks

Wernersson, Lars‐Erik; Lind, Erik; Lembke, Jonas; Martinsson, Bo; Seifert, Werner

doi:10.1016/j.jcrysgro.2005.03.064

Cited by 6 publications

(6 citation statements)

References 8 publications

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“…This corresponds to the {110} and {111A} planes. It was reported [3], that similar ridges were observed during epitaxial overgrowth of InAs on W-InAs substrates at 600ºC, with the gratings oriented along the [011]-direction. The identification of the same shape and directional dependence of the limiting growth planes as in homoepitaxial overgrowth indicates that the strain does not considerably influence the growth of InAs on W--patterned GaAs.…”

Section: Resultssupporting

confidence: 67%

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Heterogeneous integration of InAs on W/GaAs by MOVPE

Astromskas

Wernersson

2008

J. Phys.: Conf. Ser.

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Section: Resultssupporting

confidence: 67%

“…The fabrication of the W-GaAs patterns is based on a liftoff process using evaporated metal [3]. The patterns formed consist of lines (width 120 nm and periods of 300 to 700 nm) and concentric rings (width 100 nm and periods of 400 nm).…”

Section: Fabrication Of Samplesmentioning

confidence: 99%

Heterogeneous integration of InAs on W/GaAs by MOVPE

Astromskas

Wernersson

2008

J. Phys.: Conf. Ser.

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“…This direction corresponds to the fast growing facet of InAs. 4 The complete overgrowth was void-free as shown in Fig. 1͑d͒.…”

Section: Epitaxial Growthmentioning

confidence: 88%

“…Such ridges were reported in the homoepitaxial InAs overgrowth at 600°C. 4 Therefore, the identification of the same shape and direction of the limiting growth planes as in homoepitaxial overgrowth indicates that the strain did not considerably influence the growth of InAs on W-patterned GaAs at the growth temperature used.…”

Section: Epitaxial Growthmentioning

confidence: 88%

Electrical characterization of thin InAs films grown on patterned W∕GaAs substrates

Astromskas

Wallenberg

Wernersson

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/ GaAs structure. A lower resistance ͑factor of 2͒ was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/ GaAs system.

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“…Moreover, it is the advantageous material for making nanoscale devices due to its surface Fermi level pinning in the conduction band without becoming an insulator because of depletion of carriers. Hence, for the past decades, there have been a number of studies [18][19][20][21][22][23][24] which examined the chemical and physical properties of its nanostructure. For instance, Persson et al 22 fabricated the dense and uniform InAs nanowire arrays.…”

mentioning

confidence: 99%

Structures, Stabilities and Electronic Properties of InAs Tubelike Clusters and Single-Walled InAs Nanotubes

Liu¹,

Heng-Jiang²,

Chen³

et al. 2011

Acta Physico-Chimica Sinica

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The geometric structures, stabilities, and electronic properties of InnAsn tubelike clusters at up to n=90 and single-walled InAs nanotubes (InAsNTs) were studied by density functional theory (DFT) calculations. The lowest-energy structures and electronic properties of the small InnAsn (n=1-3) clusters are consistent with those found in earlier studies. A family of stable tubelike structures with In-As alternating arrangement was observed when n≥4 and their structural units (four-membered rings and sixmembered rings) obey the general developing formula. The average binding energies of the clusters show that the tubelike cluster with eight atoms in the cross section is the most stable cluster. The sizedependent properties of the frontier molecular orbital surfaces explain why we can successfully obtain long and stable tubelike clusters. They also illustrate the reason why InAsNTs can be synthesized experimentally. We also found that the single-walled InAsNTs can be prepared by the proper assembly of tubelike clusters to form semiconductors with large bandgap.

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InAs epitaxial lateral overgrowth of W masks

Cited by 6 publications

References 8 publications

Heterogeneous integration of InAs on W/GaAs by MOVPE

Heterogeneous integration of InAs on W/GaAs by MOVPE

Electrical characterization of thin InAs films grown on patterned W∕GaAs substrates

Structures, Stabilities and Electronic Properties of InAs Tubelike Clusters and Single-Walled InAs Nanotubes

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